RN6006 TOSHIBA Semiconductor CORPORATION, RN6006 Datasheet

RN6006

Manufacturer Part Number

RN6006

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN6006.pdf (3 pages)

2.RN6006.pdf (3 pages)

3.RN6006.pdf (3 pages)

Specifications of RN6006

Date_code

05+

Packing_info

SOT-89

Current page: 1 of 3
Download datasheet (89Kb)

Motor Drive Circuit Applications

Power Amplifier Applications

Power Switching Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Small flat package

l P

l Complementary to RN5006

Equivalent Circuit

Maximum Ratings

Note: Pulse width < = 10ms, duty cycle < = 30 %

* : Mounterd on ceramic substrate (250mm

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

= 1~2W (mounted on ceramic substrate)

Characteristic

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Pulse (Note1)

(Ta = 25° ° ° ° C)

Symbol

CBO

CEO

EBO

stg

RN6006

´ 0.8t)

−55~150

Rating

1000

−0.4

−10

500

150

−6

−2

−4

Unit

°C

Weight: 0.05g (typ.)

Marking

JEDEC

JEITA

TOSHIBA

2-5K1A

SC-62

2001-10-29

―

RN6006

Unit: mm

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