AT25DF641S3HB ATMEL Corporation, AT25DF641S3HB Datasheet

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AT25DF641S3HB

Manufacturer Part Number
AT25DF641S3HB
Description
SOP-16
Manufacturer
ATMEL Corporation
Datasheet

Specifications of AT25DF641S3HB

Date_code
08+
Features
1. Description
The AT25DF641 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT25DF641, with its erase granularity as small as 4-Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
Single 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Very High Operating Frequencies
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Individual Sector Protection with Global Protect/Unprotect Feature
Hardware Controlled Locking of Protected Sectors via WP Pin
Sector Lockdown
128-Byte Programmable OTP Security Register
Flexible Programming
Fast Program and Erase Times
Program and Erase Suspend/Resume
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– Supports SPI Modes 0 and 3
– Supports RapidS
– Supports Dual-Input Program and Dual-Output Read
– 100 MHz for RapidS
– 85 MHz for SPI
– Clock-to-Output (t
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
– 128 Sectors of 64-Kbytes Each
– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
– Byte/Page Program (1 to 256 Bytes)
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
– 5 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
– 16-Lead SOIC (300-mil wide)
– 8-Contact Very Thin DFN (6 x 8 mm)
®
V
Operation
) of 5 ns Maximum
64-Megabit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF641
Preliminary
See applicable errata
in
Section 18.
3680E–DFLASH–12/08

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