CY62256LL70ZC Cypress Semiconductor Corporation., CY62256LL70ZC Datasheet

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CY62256LL70ZC

Manufacturer Part Number
CY62256LL70ZC
Description
SOP-28
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62256LL70ZC-X
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Cypress Semiconductor Corporation
Document #: 38-05248 Rev. *B
Features
• High speed: 55 ns and 70 ns
• Voltage range: 4.5V–5.5V operation
• Low active power (70 ns, LL version)
• Low standby power (70 ns, LL version)
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Package available in a standard 450-mil-wide (300-mil
Note:
1.
Logic Block Diagram
body width) 28-lead narrow SOIC, 28-lead TSOP-1,
28-lead reverse TSOP-1, and 600-mil 28-lead PDIP
packages
— 275 mW (max.)
— 28 W (max.)
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
CE
WE
OE
A
A
A
A
A
A
A
A
A
10
9
8
7
6
5
4
3
2
3901 North First Street
INPUTBUFFER
512 x 512
DECODER
COLUMN
ARRA Y
Functional Description
The CY62256 is a high-performance CMOS static RAM
organized as 32K words by 8 bits. Easy memory expansion is
provided by an active LOW chip enable (CE) and active LOW
output enable (OE) and three-state drivers. This device has an
automatic
consumption by 99.9% when deselected.
An active LOW write enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
addressed by the address present on the address pins (A
through A
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and write enable
(WE) is HIGH.
POWER
DOWN
0
through I/O
256K (32K x 8) Static RAM
14
San Jose
). Reading the device is accomplished by selecting
power-down
7
) is written into the memory location
feature,
CA 95134
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
[1]
0
1
2
3
4
5
6
7
Revised August 27, 2002
reducing
408-943-2600
CY62256
the
power
0

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