IS43DR16320B25DBL Integrated Silicon Solution, IS43DR16320B25DBL Datasheet

IS43DR16320B25DBL

Manufacturer Part Number

IS43DR16320B25DBL

Description

BGA84

Manufacturer

Integrated Silicon Solution

Datasheet

1.IS43DR16320B25DBL.pdf (29 pages)

Specifications of IS43DR16320B25DBL

Date_code

10+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IS43DR16320B25DBLI

Manufacturer:

ISSI

Quantity:

5 440

Company:

Meier Automation Equipment Co., Limited

Part Number:

IS43DR16320B25DBLI

Manufacturer:

ISSI

Quantity:

20 000

Current page: 1 of 29
Download datasheet (565Kb)

IS43/46DR86400B, IS43/46DR16320B

512Mb (x8, x16) DDR2 SDRAM

FEATURES

OPTIONS

Clock Cycle Timing

Note: The ‐5B device specification is shown for reference only.

Integrated Silicon Solution, Inc. – www.issi.com –

Rev. H, 11/30/2011

Speed Grade

CL‐tRCD‐tRP

tCK (CL=3)

tCK (CL=4)

tCK (CL=5)

tCK (CL=6)

Frequency (max)



 Configuration:

 Package:

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances



Clock frequency up to 400MHz

Posted CAS

Programmable CAS Latency: 3, 4, 5 and 6

Programmable Additive Latency: 0, 1, 2, 3, 4 and 5

Write Latency = Read Latency‐1

Programmable Burst Sequence: Sequential or

Interleave

Programmable Burst Length: 4 and 8

Automatic and Controlled Precharge Command

Power Down Mode

Auto Refresh and Self Refresh

Refresh Interval: 7.8 s (8192 cycles/64 ms)

OCD (Off‐Chip Driver Impedance Adjustment)

ODT (On‐Die Termination)

Weak Strength Data‐Output Driver Option

Bidirectional differential Data Strobe (Single‐

ended data‐strobe is an optional feature)

64Mx8 (16M x 8 x 4 banks)

32Mx16 (8M x 16 x 4 banks)

60‐ball TW‐BGA for x8

84‐ball TW‐BGA for x16

DDR2‐400B

3‐3‐3

200

‐5B

DDR2‐533C

4‐4‐4

‐37C

3.75

266

DDR2‐667D

5‐5‐5

3.75

ADDRESS TABLE

333

‐3D

Parameter

Row Addressing

Column Addressing

Bank Addressing

Precharge Addressing



On‐Chip DLL aligns DQ and DQs transitions with

CK transitions

Differential clock inputs CK and CK#

VDD and VDDQ = 1.8V ± 0.1V

PASR (Partial Array Self Refresh)

SSTL_18 interface

tRAS lockout supported

Read Data Strobe supported (x8 only)

Internal four bank operations with single pulsed

RAS

Operating temperature:

Commercial (T

Industrial (T

Automotive, A1 (T

+95°C)

Automotive, A2 (T

to +105°C)

DDR2‐800E

6‐6‐6

‐25E

3.75

400

= ‐40°C to +85°C; T

2.5

= 0°C to +70°C ; T

= ‐40°C to +85°C; T

= ‐40°C to +105°C; T

BA0‐BA1

A0‐A13

64Mx8

A0‐A9

A10

DDR2‐800D

5‐5‐5

‐25D

3.75

= ‐40°C to +95°C)

400

DECEMBER 2011

2.5

= 0°C to +85°C)

BA0‐BA1

32Mx16

A0‐A12

= ‐40°C to

A0‐A9

A10

= ‐40°C

Units

MHz

tCK

Related parts for IS43DR16320B25DBL

Related keywords

IS43DR16320B25DBL datasheet
IS43DR16320B25DBL data sheet
IS43DR16320B25DBL pdf datasheet
IS43DR16320B25DBL component
IS43DR16320B25DBL part
IS43DR16320B25DBL distributor
IS43DR16320B25DBL RoHS
IS43DR16320B25DBL datasheet download