M29F400BB55M6F STMicroelectronics, M29F400BB55M6F Datasheet

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M29F400BB55M6F

Manufacturer Part Number
M29F400BB55M6F
Description
TSOP48
Manufacturer
STMicroelectronics
Datasheets

Specifications of M29F400BB55M6F

Date_code
04+
Feature summary
December 2006
Single 5 V ± 10% supply voltage for program,
erase and read operations
Access time: 45 ns
Programming time
– 8 µs per Byte/Word typical
11 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
Program/erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
Erase Suspend and Resume modes
– Read and Program another Block during
Unlock Bypass Program command
– Faster Production/Batch Programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 program/erase cycles per block
20-year data retention
– Defectivity below 1 ppm/year
algorithm
Erase Suspend
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Rev 4
Electronic signature
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
ECOPACK
single supply Flash memory
®
packages available
44
TSOP48 (N)
SO44 (MT)
12 x 20mm
1
M29F400BB
M29F400BT
www.st.com
1/40
1

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