S3C44B0X Samsung, S3C44B0X Datasheet - Page 475

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S3C44B0X

Manufacturer Part Number
S3C44B0X
Description
BGA
Manufacturer
Samsung
Datasheets

Specifications of S3C44B0X

Date_code
02+
S3C2400 RISC MICROPROCESSOR
(V
= 1.8 V
0.15 V, T
= 0 to 70 C, V
DD
A
Parameter
DRAM Address Delay
DRAM Row active Delay
DRAM Read Column active Delay
DRAM Output enable Delay
DRAM read Data Setup time
DRAM read Data Hold time
DRAM Write Cas active Delay
DRAM Cbr Cas active Delay
DRAM Write enable Delay
DRAM output Data Delay
Table 23-8. Memory Interface Timing Constants
(V
= 1.8 V
0.15 V, T
= 0 to 70 C, V
DD
A
Parameter
SDRAM Address Delay
SDRAM Chip Select Delay
SDRAM Row active Delay
SDRAM Column active Delay
SDRAM Byte Enable Delay
SDRAM Write enable Delay
SDRAM read Data Setup time
SDRAM read Data Hold time
SDRAM output Data Delay
SDRAM Clock Eable Delay
Table 23-7. Clock Timing Constants
= 3.3V
0.3V)
EXT
Symbol
Min
t
DAD
t
DRD
t
DRCD
t
DOD
t
DDS
t
DDH
t
DWCD
t
DCCD
t
DWD
t
DDD
= 3.3V
0.3V)
EXT
Symbol
Min
t
SAD
t
SCSD
t
SRD
t
SCD
t
SBED
t
SWD
t
SDS
t
SDH
t
SDD
T
cked
ELECTRICAL DATA
Typ
Max
Unit
9
ns
14
ns
15
ns
14
ns
1
ns
5
ns
15
ns
9
ns
15
ns
16
ns
Typ
Max
Unit
5
ns
4
ns
4
ns
4
ns
4
ns
4
ns
4
ns
0
ns
5
ns
5
ns
23-41

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