SD293110 STMicroelectronics, SD293110 Datasheet

SD293110

Manufacturer Part Number

SD293110

Description

TO-59r

Manufacturer

STMicroelectronics

Datasheet

1.SD293110.pdf (10 pages)

Specifications of SD293110

Date_code

04+

Current page: 1 of 10
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• GOLD METALLIZATION

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

• THERMALLY ENHANCED PACKAGING FOR

DESCRIPTION

The SD2931-10 is a gold metallized N-Channel

MOS field-effect RF power transistor. Being

electrically identical to the standard SD2931

MOSFET, it is intended for use in 50 V dc large

signal applications up to 230 MHz.

The SD2931-10 is mechanical compatible to the

SD2931 but offers in addition a better thermal

capability (25 %

representing the best-in-class transistors for ISM

applications, where reliability and ruggedness are

critical factors.

ORDER CODES

ABSOLUTE MAXIMUM RATINGS (T

THERMAL DATA

July 2004

175 MHz

LOWER JUNCTION TEMPERATURES

Symbol

(BR)DSS

OUT

th(j-c)

DISS

DGR

STG

Order Codes

SD2931-10

= 150 W MIN. WITH 14 dB GAIN @

Drain Source Voltage

Drain-Gate Voltage (R

Gate-Source Volatge

Drain Current

Power Dissipation

Max. Operating Junction Temperature

Storage Temperature

Junction -Case Thermal Resistance

lower

thermal resistance),

SD2931-10

Marking

Parameter

= 1M )

CASE

HF/VHF/UHF N-CHANNEL MOSFETs

= 25

Package

RF POWER TRANSISTORS

M174

1. Drain

2. Source

PIN CONNECTION

epoxy sealed

-65 to +150

M174

Value

0.45

125

±20

389

200

SD2931-10

Plastic Tray

Packaging

3. Gate

4. Source

REV. 4

°C/W

Unit

°C

1/10

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