SI4420DYT1E3 Vishay Semiconductors, SI4420DYT1E3 Datasheet

SI4420DYT1E3

Manufacturer Part Number

SI4420DYT1E3

Description

SOP-8

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4420DY-T1-E3.pdf (5 pages)

Specifications of SI4420DYT1E3

Date_code

07+

Current page: 1 of 5
Download datasheet (77Kb)

Notes

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 71818

S-31990—Rev. F, 13-Oct-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Surface Mounted on FR4 Board, t v 10 sec.

(V)

Ordering Information: Si4420DY

t A bi

0.013 @ V

0.009 @ V

= 150_C)

DS(on)

Si4420DY-T1 (with Tape and Reel)

Top View

Parameter

SO-8

(W)

N-Channel 30-V (D-S) MOSFET

= 4.5 V

= 10 V

= 25_C UNLESS OTHERWISE NOTED)

Steady State

t t 10 sec

13.5

(A)

= 25_C

= 70_C

= 25_C

= 70_C

Symbol

, T

thJA

thJF

N-Channel MOSFET

stg

FEATURES

D TrenchFETr Power MOSFET

D 100% R

Typical

10 sec

13.5

10.8

Tested

2.7

3.0

1.9

−55 to 150

"20

Vishay Siliconix

Steady State

Maximum

1.36

0.95

9.5

7.5

1.5

Si4420DY

www.vishay.com

Unit

_C/W

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