SI4840BDYT1E3 Vishay Semiconductors, SI4840BDYT1E3 Datasheet

SI4840BDYT1E3

Manufacturer Part Number

SI4840BDYT1E3

Description

SOP8

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4840BDYT1E3.pdf (7 pages)

Specifications of SI4840BDYT1E3

Date_code

07+

Current page: 1 of 7
Download datasheet (105Kb)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T

Document Number: 69795

S09-0532-Rev. C, 06-Apr-09

Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Avalanche Current

Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

PRODUCT SUMMARY

(V)

= 25 °C.

0.012 at V

0.009 at V

Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

Top View

DS(on)

SO-8

(Ω)

= 4.5 V

= 10 V

= 150 °C)

a, c

N-Channel 40-V (D-S) MOSFET

(A)

Steady State

t ≤ 10 s

L = 0.1 mH

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C, unless otherwise noted

15 nC

(Typ.)

Symbol

thJA

thJF

Symbol

, T

FEATURES

APPLICATIONS

stg

• Halogen-free According to IEC 61249-2-21

• TrenchFET

• 100 % R

• 100 % UIS Tested

• Compliant to RoHS directive 2002/95/EC

• Synchronous Rectification

• POL, IBC

Definition

- Secondary Side

Typical

Tested

Power MOSFET

- 55 to 150

12.4

9.9

2.1

2.5

1.6

Limit

± 20

3.8

a, b

N-Channel MOSFET

Maximum

Vishay Siliconix

Si4840BDY

www.vishay.com

°C/W

Unit

°C

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