SI4848DYT1E3 Vishay Semiconductors, SI4848DYT1E3 Datasheet

SI4848DYT1E3

Manufacturer Part Number

SI4848DYT1E3

Description

SOP8

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4848DYT1E3.pdf (5 pages)

Specifications of SI4848DYT1E3

Date_code

09+

Current page: 1 of 5
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Notes

Document Number: 71356

S-03950—Rev. B, 26-May-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Avalanch Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Surface Mounted on 1” x 1” FR4 Board.

Ordering Information: Si4848DY

150

(V)

t A bi

Si4848DY-T1 (with Tape and Reel)

0.095 @ V

0.085 @ V

= 150_C)

Top View

Parameter

SO-8

DS(on)

N-Channel 150-V (D-S) MOSFET

(W)

= 6.0 V

= 10 V

= 25_C UNLESS OTHERWISE NOTED)

Steady State

L = 0.1 mH

t v 10 sec

= 25_C

= 70_C

= 25_C

= 70_C

3.7

3.5

(A)

N-Channel MOSFET

Symbol

, T

thJA

thJF

stg

10 secs

Typical

3.7

3.0

2.5

3.0

1.9

-55 to 150

"20

150

Steady State

Maximum

Vishay Siliconix

2.7

2.1

1.3

1.5

1.0

Si4848DY

www.vishay.com

Unit

_C/W

C/W

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