SI4943DYE3 Vishay Semiconductors, SI4943DYE3 Datasheet

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SI4943DYE3

Manufacturer Part Number

SI4943DYE3

Description

SOP-8

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4943DY-T1-E3.pdf (5 pages)

Specifications of SI4943DYE3

Date_code

05+

Current page: 1 of 5
Download datasheet (66Kb)

Notes

a.

Document Number: 71682

S-21192—Rev. B, 29-Jul-02

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

V

Surface Mounted on 1 ” x 1” FR4 Board.

i

DS

- 20

- 20

(V)

J

ti

t A bi

G

G

S

S

1

1

2

2

0.030 @ V

0.019 @ V

J

J

a

a

1

2

3

4

= 150_C)

= 150_C)

t

a

a

r

Parameter

Parameter

DS(on)

Top View

Dual P-Channel 20-V (D-S) MOSFET

SO-8

GS

GS

a

a

= - 4.5 V

= - 10 V

(W)

a

8

7

6

5

D

D

D

D

1

1

2

2

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

t v 10 sec

T

T

T

T

I

New Product

A

A

A

A

D

- 8.4

- 6.7

= 25_C

= 70_C

= 25_C

= 70_C

(A)

G

1

Symbol

Symbol

P-Channel MOSFET

T

R

R

R

J

V

V

I

P

P

, T

DM

thJA

thJF

I

I

I

GS

DS

D

D

S

D

D

stg

D

1

FEATURES

D TrenchFETr Power MOSFET

APPLICATIONS

D Load Switching

D Battery Switching

S

1

D

- Computer

- Game Systems

- 2-Cell Li-lon

1

10 secs

Typical

- 8.4

- 6.7

- 1.7

2.0

1.3

45

85

26

- 55 to 150

"20

- 20

- 30

G

2

Steady State

P-Channel MOSFET

Maximum

Vishay Siliconix

- 6.3

- 5.1

- 0.9

62.5

1.1

0.7

110

35

D

2

S

2

D

Si4943DY

2

www.vishay.com

Unit

Unit

_C/W

_C

C/W

W

W

V

V

A

A

1

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