SPD30N06S2L23 Infineon Technologies AG, SPD30N06S2L23 Datasheet

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SPD30N06S2L23

Manufacturer Part Number
SPD30N06S2L23
Description
SOT-252
Manufacturer
Infineon Technologies AG
Datasheet

Specifications of SPD30N06S2L23

Date_code
07+
Feature
• N-Channel
• Enhancement mode
• Logic Level
•=175°C operating temperature
• Avalanche rated
• dv/dt rated
OptiMOS
Type
SPD30N06S2L-23
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
C
=30A, V
=30 A , V
=25°C,
=100°C
=25°C
=25°C
DS
1)
DD
=40V, di/dt=200A/µs, T
=25V, R
= = = =
Power-Transistor
GS
=25Ω
Package
P-TO252
j
= 25 °C, unless otherwise specified
jmax
=175°C
Ordering Code
Q67060-S7410
Preliminary data
Page 1
Symbol
I
I
E
dv/dt
V
P
T
D
D puls
j ,
AS
GS
tot
T
stg
Marking
2N06L23
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
SPD30N06S2L-23
DS(on)
±20
120
150
30
20
80
6
P-TO252
2001-05-23
55
23
30
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

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