ATP107-TL-H ON Semiconductor, ATP107-TL-H Datasheet

ATP107-TL-H

Manufacturer Part Number

ATP107-TL-H

Description

Manufacturer

ON Semiconductor

Datasheet

1.ATP107-TL-H.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ATP107-TL-H

Manufacturer:

ON Semiconductor

Quantity:

390

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Download datasheet (258Kb)

Ordering number : ENA1603

ATP107

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : ATP107

Note : *1 V DD =--10V, L=200 μ H, I AV =- -25A

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW≤10μs)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

•

Low ON-resistance.

Large current.

Slim package.

4.5V drive.

Halogen free compliance.

*2 L ≤ 200 μ H, Single pulse

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer ' s

products or equipment.

Parameter

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V DSS

V GSS

I D

I DP

P D

Tch

Tstg

E AS

I AV

V (BR)DSS

I DSS

I GSS

Symbol

www.semiconductor-sanyo.com/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

Tc=25°C

I D =- -1mA, V GS =0V

V DS =- -40V, V GS =0V

V GS =±16V, V DS =0V

ATP107

Conditions

N1109PA TK IM TC-00002146

DATA SHEET

min

--40

Ratings

typ

Ratings

Continued on next page.

--55 to +150

max

--150

--40

±20

--50

--25

±10

150

- -1

No. A1603-1/4

Unit

°C

μA

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