MT46H64M16LFBF6ITB Micron Semiconductor Products, MT46H64M16LFBF6ITB Datasheet

MT46H64M16LFBF6ITB

Manufacturer Part Number

MT46H64M16LFBF6ITB

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT46H64M16LFBF6ITB.pdf (99 pages)

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Mobile Low-Power DDR SDRAM

MT46H64M16LF – 16 Meg x 16 x 4 banks

MT46H32M32LF – 8 Meg x 32 x 4 banks

MT46H32M32LG – 8 Meg x 32 x 4 banks

Features

• V

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR)

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

• 4 internal banks for concurrent operation

• Data masks (DM) for masking write data; one mask

• Programmable burst lengths (BL): 2, 4, 8, or 16

• Concurrent auto precharge option is supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS-compatible inputs

• Temperature-compensated self refresh (TCSR)

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Status read register (SRR)

• Selectable output drive strength (DS)

• Clock stop capability

• 64ms refresh, 32ms for automotive temperature

PDF: 09005aef83d9bee4

1gb_ddr_mobile_sdram_t68m.pdf - Rev. G 9/11 EN

architecture; two data accesses per clock cycle

aligned with data for WRITEs

per byte

Table 1: Key Timing Parameters (CL = 3)

Speed Grade

DDQ

-54

-75

-5

-6

= 1.70–1.95V

Products and specifications discussed herein are subject to change by Micron without notice.

Clock Rate

200 MHz

185 MHz

166 MHz

133 MHz

Access Time

5.0ns

6.0ns

Notes:

Options

• V

• Configuration

• Addressing

• Plastic "green" package

• PoP (plastic "green" package)

• Timing – cycle time

• Power

• Operating temperature range

• Design revision

– 1.8V/1.8V

– 64 Meg x 16 (16 Meg x 16 x 4

– 32 Meg x 32 (8 Meg x 32 x 4 banks)

– JEDEC-standard

– JEDEC reduced page size

– 60-ball VFBGA (8mm x 9mm)

– 90-ball VFBGA (8mm x 13mm)

– 168-ball WFBGA (12mm x 12mm)

– 5ns @ CL = 3 (200 MHz)

– 5.4ns @ CL = 3 (185 MHz)

– 6ns @ CL = 3 (166 MHz)

– 7.5ns @ CL = 3 (133 MHz)

– Standard I

– Commercial (0˚ to +70˚C)

– Industrial (–40˚C to +85˚C)

– Automotive (–40˚C to +105˚C)

1Gb: x16, x32 Mobile LPDDR SDRAM

Micron Technology, Inc. reserves the right to change products or specifications without notice.

banks)

1. Only available for x16 configuration.

2. Only available for x32 configuration.

3. Contact factory for availability.

DDQ

DD2

DD6

Marking

Features

64M16

32M32

None

-54

-75

-5

-6

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