IRF7809AVTR International Rectifier Corp., IRF7809AVTR Datasheet

IRF7809AVTR

Manufacturer Part Number

IRF7809AVTR

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF7809AVTR.pdf (8 pages)

Specifications of IRF7809AVTR

Case

SOP

Date_code

2003

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7809AVTR

Manufacturer:

BCD

Quantity:

100 000

Company:

BOSTOCK HK LIMITED

Part Number:

IRF7809AVTR

Manufacturer:

IOR

Quantity:

3 023

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7809AVTR

Manufacturer:

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7809AVTRPBF

Manufacturer:

SANKEN

Quantity:

3 572

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7809AVTRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF7809AVTRPBF

Quantity:

4 000

Current page: 1 of 8
Download datasheet (201Kb)

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current

• 100% Tested for R

Description

This new device employs advanced HEXFET Power

MOSFET technology to achieve an unprecedented

balance of on-resistance and gate charge. The reduced

conduction and switching losses make it ideal for high

efficiency DC-DC converters that power the latest

generation of microprocessors.

The IRF7809AV has been optimized for all parameters

that are critical in synchronous buck converters including

The IRF7809AV offers particulary low R

Cdv/dt immunity for synchronous FET applications.

The package is designed for vapor phase, infra-red,

convection, or wave soldering techniques. Power

dissipation of greater than 2W is possible in a typical

PCB mount application.

Absolute Maximum Ratings

Thermal Resistance

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain or Source

Current (V

Pulsed Drain Current

Power Dissipation

Junction & Storage Temperature Range

Continuous Source Current (Body Diode)

Pulsed Source Current

Parameter

Maximum Junction-to-Ambientƒ

Maximum Junction-to-Lead

DS(on)

applications

, gate charge and Cdv/dt-induced turn-on immunity.

≥ 4.5V)

= 25°C

= 90°C

= 25°C

= 90°C

DS(on)

and high

Symbol

, T

θJA

θJL

STG

DEVICE CHARACTERISTICS…

SO-8

IRF7809A V

–55 to 150

oss

(on)

13.3

14.6

±12

100

2.5

3.0

Max.

2.5

IRF7809AV

7.0mΩ

41nC

14nC

30nC

Top View

PD-90010A

Units

°C/W

°C

Units

8/23/05

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