MT46H32M32LFJG-6 IT Micron Semiconductor Products, MT46H32M32LFJG-6 IT Datasheet

MT46H32M32LFJG-6 IT

Manufacturer Part Number

MT46H32M32LFJG-6 IT

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT46H32M32LFJG-6IT.pdf (17 pages)

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NAND Flash and Mobile LPDRAM

168-Ball Package-on-Package (PoP) MCP

Combination Memory (TI OMAP™)

MT29CxGxxMAxxxxx

Features

PDF: 09005aef83070ff3

168ball_nand_lpdram_j4xx_omap.pdf - Rev. I 6/09

• Micron

• RoHS-compliant, “green” package

• Separate NAND Flash and LPDRAM interfaces

• Space-saving multichip package/package-on-package

• Low-voltage operation (1.70–1.95V)

• Industrial temperature range: –40°C to +85°C

NAND Flash-Specific Features

Organization

• Page size

• Block size: 64 pages (128K + 4K bytes)

Mobile LPDRAM-Specific Features

• No external voltage reference required

• No minimum clock rate requirement

• 1.8V LVCMOS-compatible inputs

• Programmable burst lengths

• Partial-array self refresh (PASR)

• Deep power-down (DPD) mode

• Selectable output drive strength

• STATUS REGISTER READ (SRR) supported

‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by

combination

– x8: 2112 bytes (2048 + 64 bytes)

– x16: 1056 words (1024 + 32 words)

Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications.

NAND Flash and LPDRAM components

168-Ball NAND Flash and LPDRAM PoP (TI OMAP) MCP

Figure 1: PoP Block Diagram

NAND Flash

Power

LPDRAM Power

Options

• Mobile LPDRAM

Notes:

– 200 MHz CL3

– 166 MHz CL3

– 133 MHz CL3

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1. Contact factory for remapped SRR output.

2. For part numbering and physical part mark-

3. CL = CAS (READ) latency.

ings, see Figure 2 (page 2) and Table 1

(page 3).

NAND Flash

LPDRAM

Device

NAND Flash

Interface

LPDRAM

Preliminary

Features

Marking

-75

-5

-6

‡

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