MT8VDDT6464HDY-335 Micron Semiconductor Products, MT8VDDT6464HDY-335 Datasheet

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MT8VDDT6464HDY-335

Manufacturer Part Number
MT8VDDT6464HDY-335
Description
Manufacturer
Micron Semiconductor Products
Datasheet
DDR SDRAM SODIMM
MT8VDDT1664HD – 128MB
MT8VDDT3264HD – 256MB
MT8VDDT6464HD – 512MB
MT8VDDT12864HD – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 64), 256MB (32 Meg x 64),
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 15.625µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Dual rank
• Gold edge contacts
Table 1:
PDF: 09005aef80765fab/Source: 09005aef806e1d28
DD8C16_32_64_128x64HD.fm - Rev. D 11/07 EN
(SODIMM)
512MB (64 Meg x 64), and 1GB (128 Meg x 64)
(-40B: V
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
(128MB) and 7.8125µs (256MB, 512MB, and 1GB)
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Notes:
Q = +2.6V)
Industry
PC3200
PC2700
PC2100
PC2100
1. The values of
actual DDR SDRAM device specifications are 15ns.
2
128MB, 256MB, 512MB, 1GB (x64, DR): 200-Pin DDR SODIMM
1
2
CL = 3
400
t
RCD and
Data Rate (MT/s)
CL = 2.5
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
1
Figure 1:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
CL = 2
266
266
266
200
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
3. Contact Micron for industrial temperature
module offerings.
200-Pin SODIMM (MO-224)
t
(ns)
RCD
15
18
20
20
A
A
3
≤ +85°C)
≤ +70°C)
(ns)
t
15
18
20
20
©2004 Micron Technology, Inc. All rights reserved.
RP
2
(ns)
t
55
60
65
65
2
RC
Marking
Features
None
-40B
-26A
-335
-265
Notes
G
Y
I
1

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