M29DW127G70ZA6E

Manufacturer Part NumberM29DW127G70ZA6E
ManufacturerMicron Semiconductor Products
M29DW127G70ZA6E datasheet
 


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128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot)
Features
Supply voltage
– V
= 2.7 to 3.6 V for program, erase and
CC
read
– V
= 1.65 to 3.6 V for I/O buffers
CCQ
– V
= 12 V for fast program (optional)
PPH
Asynchronous random/page read
– Page width: 8 words / 16 bytes
– Page access: 25 ns
– Random access: 60 or 70, 80 ns
Enhanced Buffered Program commands
– 256 words
Programming time
– 15 μs per byte/word (typical)
– 32-word write buffer
– Chip program time: 5 s with V
without V
PPH
Erase verify
Memory blocks
– Quadruple bank memory array:
16 Mbit+48 Mbit+48 Mbit+16 Mbit
– Parameter blocks (at top and bottom)
Dual operation
– while program or erase in one bank, read in
any of the other banks
Program/erase suspend and resume modes
– Read from any block during program
suspend
– Read and program another block during
erase suspend
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer/ Enhanced Buffered Program
commands
– Faster production/batch programming
– Faster block and chip erase
Common flash interface
– 64-bit security code
May 2009
and 8 s
PPH
100,000 program/erase cycles per block
Low power consumption
– Standby and automatic standby
Hardware block protection
– V
/WP pin for fast program and write
PP
protect of the four outermost parameter
blocks
Security features
– Volatile protection
– Non-volatile protection
– Password protection
– Additional block protection
Extended memory block
– Extra block (128-word / 256-byte factory
locked and 128-word / 256-byte customer
lockable) used as security block or to store
additional information
Electronic signature
– Manufacturer code: 0020h
– Device code: 227Eh+2220h+2204h
ECOPACK
Rev 3
M29DW127G
3 V supply flash memory
TSOP56 (NF)
14 x 20 mm
BGA
TBGA64 (ZA)
10 x 13 mm
packages available
®
www.numonyx.com
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