M29W128GL70ZA3F Micron Semiconductor Products, M29W128GL70ZA3F Datasheet

M29W128GL70ZA3F

Manufacturer Part Number

M29W128GL70ZA3F

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.M29W128GL70ZA3F.pdf (94 pages)

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Features

Table 1.

August 2010

M29W128GH: uniform, last block protected by V

M29W128GL: uniform, first block protected by V

Supply voltage

– V

Asynchronous random/page read

– Page size: 8 words or 16 bytes

– Page access: 25, 30 ns

– Random access: 60 (only available upon

Fast program commands

– 32 words (64-byte write buffer)

Enhanced buffered program commands

– 256 words

Programming time

– 16 µs per byte/word typical

– Chip program time: 5 s with V

Memory organization

– M29128GH/L: 128 main blocks,

Program/erase controller

– Embedded byte/word program algorithms

Program/ erase suspend and resume

– Read from any block during program

– Read and program another block during

customer request) or 70, 80 ns

without V

128 Kbytes/64 Kwords each

suspend

erase suspend

CCQ

PPH

= 2.7 to 3.6 V for program, erase, read

= 12 V for fast program (optional)

= 1.65 to 3.6 V for I/O buffers

Device summary

PPH

128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block)

Root part number

PPH

and 8 s

/WP

Rev 11

TSOP56 (N)

Unlock Bypass/Block Erase/Chip Erase/Write

to Buffer/Enhanced Buffer Program commands

– Faster production/batch programming

– Faster block and chip erase

first or last block regardless of block protection

settings

Software protection:

– Volatile protection

– Non-volatile protection

– Password protection

Common flash interface

– 64-bit security code

128-word extended memory block

– Extra block used as security block or to

Low power consumption

– Standby and automatic standby

Minimum 100,000 program/erase cycles per

block

RoHS compliant packages

Automotive device grade: Temperature -40 °C

to 125 °C (Automotive grade certified)

14 x 20 mm

store additional information

/WP pin for fast program and write: protects

3 V supply flash memory

227Eh + 2221h + 2201h

227Eh + 2221h + 2200h

TBGA64 (ZA)

10 x 13 mm

Device code

M29W128GH

M29W128GL

BGA

www.numonyx.com

11 x 13 mm

FBGA (ZS)

BGA

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