GS8161Z18BGT-200 GSI Technology, GS8161Z18BGT-200 Datasheet

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GS8161Z18BGT-200

Manufacturer Part Number
GS8161Z18BGT-200
Description
Manufacturer
GSI Technology
Datasheet

Specifications of GS8161Z18BGT-200

Pack_quantity
72
Comm_code
85423245
Lead_time
70
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
• Fully pin-compatible with both pipelined and flow through
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 100-lead TQFP and 165-bump FP-BGA
• RoHS-compliant 100-lead TQFP and 165-bump BGA
Functional Description
The GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)
is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs,
like ZBT, NtRAM, NoBL or other pipelined read/double late
write or flow through read/single late write SRAMs, allow
utilization of all available bus bandwidth by eliminating the
need to insert deselect cycles when the device is switched from
read to write cycles.
Rev: 1.03 9/2005
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
read-write-read bus utilization
NtRAM™, NoBL™ and ZBT™ SRAMs
packages
packages available
Flow Through
Pipeline
3-1-1-1
2-1-1-1
18Mb Pipelined and Flow Through
Curr
Curr
Synchronous NBT SRAM
Curr
Curr
tCycle
tCycle
Parameter Synopsis
t
(x32/x36)
t
(x32/x36)
KQ
KQ
(x18)
(x18)
1/37
GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)
may be configured by the user to operate in Pipeline or Flow
Through mode. Operating as a pipelined synchronous device,
in addition to the rising-edge-triggered registers that capture
input signals, the device incorporates a rising-edge-triggered
output register. For read cycles, pipelined SRAM output data is
temporarily stored by the edge triggered output register during
the access cycle and then released to the output drivers at the
next rising edge of clock.
The GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)
is implemented with GSI's high performance CMOS
technology and is available in JEDEC-standard 100-pin TQFP
and 165-bump FP-BGA packages.
-250
295
345
225
255
2.5
4.0
5.5
5.5
-200
245
285
200
220
3.0
5.0
6.5
6.5
-150
200
225
185
205
3.8
6.7
7.5
7.5
Unit
mA
mA
mA
mA
ns
ns
ns
ns
© 2004, GSI Technology
250 MHz–150 MHz
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DD

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