NP80N055MHE-S18-AY Renesas Electronics Corporation., NP80N055MHE-S18-AY Datasheet

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NP80N055MHE-S18-AY

Manufacturer Part Number
NP80N055MHE-S18-AY
Description
TO220-3/80 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Manufacturer
Renesas Electronics Corporation.

Specifications of NP80N055MHE-S18-AY

Pack_quantity
50
Comm_code
85412900
Lead_time
126
<R>
Document No. D14096EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
ORDERING INFORMATION
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
• Channel temperature 175 degree rated
• Super low on-state resistance
• Low input capacitance
• Built-in gate protection diode
DESCRIPTION
FEATURES
C
R
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
NP80N055EHE-E1-AY
NP80N055EHE-E2-AY
NP80N055KHE-E1-AY
NP80N055KHE-E2-AY
NP80N055CHE-S12-AZ
NP80N055DHE-S12-AY
NP80N055MHE-S18-AY
NP80N055NHE-S18-AY
iss
DS(on)
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
= 2400 pF TYP.
2. Not for new design
= 11 mΩ MAX. (V
PART NUMBER
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note1, 2
Note1, 2
Note1
Note1
Note1, 2
Note1, 2
Note1
Note1
GS
NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
= 10 V, I
N-CHANNEL POWER MOS FET
D
LEAD PLATING
Pure Sn (Tin)
Pure Sn (Tin)
= 40 A)
The mark <R> shows major revised points.
Sn-Ag-Cu
DATA SHEET
SWITCHING
MOS FIELD EFFECT TRANSISTOR
Tape 800 p/reel
Tube 50 p/tube
PACKING
NP80N055EHE, NP80N055KHE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
PACKAGE
(TO-220)
(TO-262)
(TO-263)
2002, 2007

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