MT29F8G08ADADAH4-IT:D Micron Semiconductor Products, MT29F8G08ADADAH4-IT:D Datasheet

MT29F8G08ADADAH4-IT:D

Manufacturer Part Number

MT29F8G08ADADAH4-IT:D

Description

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT29F4G08ABBDAH4D.pdf (132 pages)

Specifications of MT29F8G08ADADAH4-IT:D

Pack_quantity

1000

Comm_code

85423269

Lead_time

Eccn

3A991B1A

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

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MT29F8G08ADADAH4-IT:D

Manufacturer:

MICRON

Quantity:

12 203

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MT29F8G08ADADAH4-IT:D

Manufacturer:

MICRON

Quantity:

12 203

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Bonase Electronics (HK) Co., Limited

Part Number:

MT29F8G08ADADAH4-IT:D

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PHI

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BOSTOCK HK LIMITED

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Manufacturer:

MICRON

Quantity:

3 482

Company:

BOSTOCK HK LIMITED

Part Number:

MT29F8G08ADADAH4-IT:D

Manufacturer:

Micron Technology Inc

Quantity:

10 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MT29F8G08ADADAH4-IT:D

Manufacturer:

MICRON/美光

Quantity:

20 000

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NAND Flash Memory

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,

MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,

MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,

MT29F16G08AJADAWP

Features

PDF: 09005aef83b25735

m60a_4gb_nand.pdf – Rev. J 9/11 EN

• Open NAND Flash Interface (ONFI) 1.0-compliant

• Single-level cell (SLC) technology

• Organization

• Asynchronous I/O performance

• Array performance

• Command set: ONFI NAND Flash Protocol

• Advanced command set

• Operation status byte provides software method for

• Ready/Busy# (R/B#) signal provides a hardware

• WP# signal: Write protect entire device

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

–

– Read page: 25µs

– Program page: 200µs (TYP: 1.8V, 3.3V)

– Erase block: 700µs (TYP)

– Program page cache mode

– Read page cache mode

– One-time programmable (OTP) mode

– Two-plane commands

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

detecting

– Operation completion

– Pass/fail condition

– Write-protect status

method of detecting operation completion

16Gb: 16,384 blocks

RC/

WC: 20ns (3.3V), 25ns (1.8V)

Products and specifications discussed herein are subject to change by Micron without notice.

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

• First block (block address 00h) is valid when ship-

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

• RESET (FFh) required as first command after pow-

• Alternate method of device initialization (Nand_In-

• Internal data move operations supported within the

• Quality and reliability

• Operating voltage range

• Operating temperature:

• Package

Notes:

ped from factory with ECC. For minimum required

ECC, see Error Management.

cles are less than 1000

er-on

it) after power up (contact factory)

plane from which data is read

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

– V

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

– 48-pin TSOP type 1, CPL

– 63-ball VFBGA

Micron Technology, Inc. reserves the right to change products or specifications without notice.

: 2.7–3.6V

: 1.7–1.95V

1. The ONFI 1.0 specification is available at

2. CPL = Center parting line.

3. See Program and Erase Characteristics for

4. These commands supported only with ECC

www.onfi.org.

disabled.

R_ECC and

PROG_ECC specifications.

Features

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