MT45W1MW16PDGA-70IT

Manufacturer Part NumberMT45W1MW16PDGA-70IT
Description
ManufacturerMicron Semiconductor Products
MT45W1MW16PDGA-70IT datasheet
 


Specifications of MT45W1MW16PDGA-70IT

Pack_quantity377Comm_code85423290
Lead_time70Eccn3A991B1A
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Async/Page CellularRAM™ 1.0 Memory
MT45W1MW16PDGA
Features
• Asynchronous and page mode interface
• Random access time: 70ns
• V
, V
Q voltages
CC
CC
– 1.7V–1.95V V
CC
1
– 1.7V–3.6V
V
Q
CC
• Page mode read access:
– 16-word page size
– Interpage read access: 70ns
– Intrapage read access: 20ns
• Low power consumption:
– Asynchronous READ: <20mA
– Intrapage READ: <15mA
– Standby: 70µA
– Deep power-down: <10µA (TYP @ 25°C)
• Low-power features:
– Temperature-compensated refresh (TCR)
– On-chip temperature sensor
– Partial-array refresh (PAR)
– Deep power-down (DPD) mode
Options
• Configuration
– 1 Meg x 16
• Package
– 48-ball VFBGA (green)
• Access time
– 70ns
• Operating temperature range
1
– Wireless (–30°C to +85°C)
2
– Industrial (–40°C to +85°C)
NOTE:
1. 3.6V I/O and –30°C exceed the CellularRAM
Workgroup 1.0 specifications.
2. Contact factory for availability.
PDF: 09005aef81cadc83/Source:09005aef81c6edb4
16mb_asyncpage_cr1_0_p23z_1.fm - Rev. F 4/08 EN
Products and specifications discussed herein are subject to change by Micron without notice.
16Mb: 1 Meg x 16 Async/Page CellularRAM 1.0 Memory
Figure 1:
A
D
G
H
Designator
MT45W1MW16PD
GA
–70
WT
IT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
Ball Assignment – 48-Ball VFBGA
1
2
3
4
5
6
LB#
OE#
A0
A1
A2
ZZ#
B
A4
DQ8
UB#
A3
CE#
DQ0
C
A6
DQ9
DQ10
A5
DQ1
DQ2
V
Q
DQ11
A17
A7
DQ3
V
SS
E
V
Q
DQ12
NC
A16
DQ4
V
CC
F
A15
DQ14
DQ13
A14
DQ5
DQ6
A13
DQ15
A19
A12
WE#
DQ7
A18
A8
A9
A10
A11
NC
Top View
(Ball Down)
Part Number Example:
MT45W1MW16PDGA-70WT
©2005 Micron Technology, Inc. All rights reserved.
Features
CC
SS