S29PL064J60BAI120 SPANSION, S29PL064J60BAI120 Datasheet

S29PL064J60BAI120

Manufacturer Part Number

S29PL064J60BAI120

Description

Manufacturer

SPANSION

Datasheet

1.S29PL064J60BAI120.pdf (102 pages)

Specifications of S29PL064J60BAI120

Pack_quantity

338

Comm_code

85423261

Lead_time

Eccn

3A991B1A

Current page: 1 of 102
Download datasheet (2Mb)

S29PL127J/S29PL129J/S29PL064J/S29PL032J

128/128/64/32 Megabit (8/8/4/2 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Read/Write

Flash Memory with Enhanced VersatileIO

Distinctive Characteristics

ARCHITECTURAL ADVANTAGES

128/128/64/32 Mbit Page Mode devices

— Page size of 8 words: Fast page read access from

Single power supply operation

— Full Voltage range: 2.7 to 3.6 volt read, erase, and

Dual Chip Enable inputs (only in PL129J)

— Two CE# inputs control selection of each half of the

Simultaneous Read/Write Operation

— Data can be continuously read from one bank while

— Zero latency switching from write to read operations

FlexBank Architecture (PL127J/PL064J/PL032J)

— 4 separate banks, with up to two simultaneous

— Bank A:

— Bank B:

— Bank C:

— Bank D:

FlexBank Architecture (PL129J)

— 4 separate banks, with up to two simultaneous

— CE#1 controlled banks:

— CE#2 controlled banks:

random locations within the page

program operations for battery-powered applications

memory space

executing erase/program functions in another bank

operations per device

PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)

PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)

PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)

PL127J - 48 Mbit (32 Kw x 96)

PL064J - 24 Mbit (32 Kw x 48)

PL032J - 12 Mbit (32 Kw x 24)

PL127J - 48 Mbit (32 Kw x 96)

PL064J - 24 Mbit (32 Kw x 48)

PL032J - 12 Mbit (32 Kw x 24)

PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31)

PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15)

PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7)

operations per device

Bank 1A:

PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)

Bank 1B:

PL129J - 48Mbit (32Kw x 96)

Bank 2A:

PL129J - 48 Mbit (32Kw x 96)

Bank 2B:

PL129J - 16Mbit (4Kw x 8 and 32Kw x 31)

Publication Number 31107

Revision A

Amendment 6

PERFORMANCE CHARACTERISTICS

SOFTWARE FEATURES

Enhanced VersatileI/O

— Output voltage generated and input voltages

— V

— 3V V

SecSi

— Up to 128 words accessible through a command

— Up to 64 factory-locked words

— Up to 64 customer-lockable words

Both top and bottom boot blocks in one device

Manufactured on 110 nm process technology

Data Retention: 20 years typical

Cycling Endurance: 1 million cycles per sector

typical

High Performance

— Page access times as fast as 20 ns

— Random access times as fast as 55 ns

Power consumption (typical values at 10 MHz)

— 45 mA active read current

— 17 mA program/erase current

— 0.2 µA typical standby mode current

Software command-set compatible with JEDEC

42.4 standard

— Backward compatible with Am29F, Am29LV,

CFI (Common Flash Interface) compliant

— Provides device-specific information to the system,

Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or

Unlock Bypass Program command

— Reduces overall programming time when issuing

tolerated on all control inputs and I/Os is determined

by the voltage on the V

PL129J devices

sequence

Am29DL, and AM29PDL families and MBM29QM/RM,

MBM29LV, MBM29DL, MBM29PDL families

allowing host software to easily reconfigure for

different Flash devices

program operations in other sectors of same bank

multiple program command sequences

Control

options at 1.8 V and 3 V I/O for PL127J and

(Secured Silicon) Sector region

Issue Date May 24, 2004

for PL064J and PL032J devices

) Control

PRELIMINARY

Related parts for S29PL064J60BAI120

Related keywords

S29PL064J60BAI120 datasheet
S29PL064J60BAI120 data sheet
S29PL064J60BAI120 pdf datasheet
S29PL064J60BAI120 component
S29PL064J60BAI120 part
S29PL064J60BAI120 distributor
S29PL064J60BAI120 RoHS
S29PL064J60BAI120 datasheet download