BG3140R Infineon Technologies AG, BG3140R Datasheet

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BG3140R

Manufacturer Part Number
BG3140R
Description
DUAL N-Channel MOSFET Tetrode
Manufacturer
Infineon Technologies AG
Datasheet
DUAL N-Channel MOSFET Tetrode
BG3140
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation, T
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1 For calculation of R
Type
BG3140
BG3140R
Low noise gain controlled input stages of UHF-
Two AGC amplifiers in one single package
Integrated gate protection diodes
Low noise figure
High gain, high forward transadmittance
Improved cross modulation at gain reduction
High AGC-range
and VHF-tuners with 5V supply voltage
thJA
BG3140R
Package
SOT363
SOT363
please refer to Application Note Thermal Resistance
1)
S
78°C
1=G1
1=G1
2=G2
2=S
AGC
HF
Input
1
Pin Configuration
3=D
3=D
Symbol
V
I
P
T
T
Symbol
R
R
D
G1
I
V
stg
ch
DS
tot
thchs
G1/2SM
V
G1/G2S
GG
G2
G1
4=D
4=D
6
GND
5=S
5=G2
-55 ... 150
5
Value
Value
Drain
160
150
25
280
8
1
6
4
6=G1
6=G1
HF Output
+ DC
Feb-27-2004
EHA07461
BG3140...
1
VPS05604
Marking
KDs
KKs
2
Unit
V
mA
V
mW
°C
Unit
K/W
3

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BG3140R Summary of contents

Page 1

... High AGC-range BG3140 BG3140R ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Package BG3140 SOT363 BG3140R SOT363 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage ...

Page 2

Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage + I ...

Page 3

Electrical Characteristics Parameter AC Characteristics - (verified by random sampling) Forward transconductance G2S Gate1 input capacitance MHz DS G2S Output ...

Page 4

Total power dissipation P 300 mW 200 150 100 Output characteristics ...

Page 5

Gate 1 forward transconductance 5V Parameter DS G2S 2. Drain current ...

Page 6

Crossmodulation V = (AGC) unw 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 ...

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