BG3140R

Manufacturer Part NumberBG3140R
DescriptionDUAL N-Channel MOSFET Tetrode
ManufacturerInfineon Technologies AG
BG3140R datasheet
 
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DUAL N-Channel MOSFET Tetrode
Low noise gain controlled input stages of UHF-
and VHF-tuners with 5V supply voltage
Two AGC amplifiers in one single package
Integrated gate protection diodes
Low noise figure
High gain, high forward transadmittance
Improved cross modulation at gain reduction
High AGC-range
BG3140
BG3140R
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Package
BG3140
SOT363
BG3140R
SOT363
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation, T
S
Storage temperature
Channel temperature
Thermal Resistance
Parameter
1)
Channel - soldering point
1 For calculation of R
please refer to Application Note Thermal Resistance
thJA
G2
AGC
G1
HF
Input
R
G1
V
GG
Pin Configuration
1=G1
2=G2
3=D
1=G1
2=S
3=D
Symbol
V
DS
I
D
I
G1/2SM
V
G1/G2S
78°C
P
tot
T
stg
T
ch
Symbol
R
thchs
1
BG3140...
4
5
6
1
VPS05604
Drain
HF Output
+ DC
GND
EHA07461
Marking
4=D
5=S
6=G1
KDs
4=D
5=G2
6=G1
KKs
Value
8
25
1
6
160
-55 ... 150
150
Value
280
Feb-27-2004
3
2
Unit
V
mA
V
mW
°C
Unit
K/W

BG3140R Summary of contents

  • Page 1

    ... High AGC-range BG3140 BG3140R ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Package BG3140 SOT363 BG3140R SOT363 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage ...

  • Page 2

    Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage + I ...

  • Page 3

    Electrical Characteristics Parameter AC Characteristics - (verified by random sampling) Forward transconductance G2S Gate1 input capacitance MHz DS G2S Output ...

  • Page 4

    Total power dissipation P 300 mW 200 150 100 Output characteristics ...

  • Page 5

    Gate 1 forward transconductance 5V Parameter DS G2S 2. Drain current ...

  • Page 6

    Crossmodulation V = (AGC) unw 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 ...