BG3140R Infineon Technologies AG, BG3140R Datasheet - Page 3

• Manufacturer Part Number: BG3140R
• Description: DUAL N-Channel MOSFET Tetrode
• Manufacturer: Infineon Technologies AG

Electrical Characteristics
Parameter
AC Characteristics - (verified by random sampling)
Forward transconductance
V
Gate1 input capacitance
V
Output capacitance
V
Power gain (self biased)
V
f = 800 MHz
V
f = 45 MHz
Noise figure
V
f = 800 MHz
V
f = 45 MHz
Gain control range
V
Cross-modulation k=1%, f
AGC = 0 dB
AGC = 10 dB
AGC = 40 dB
DS
DS
DS
DS
DS
DS
DS
DS
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, V
D
D
D
D
G2S
G2S
G2S
G2S
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 4 V
= 4 V, f = 1 MHz
= 4 V, f = 100 MHz
= 4...0 V, f = 800 MHz
G2S
G2S
G2S
G2S
w
=50MHz, f
= 4 V,
= 4 V,
= 4 V,
= 4 V,
unw
=60MHz
3
Symbol
g
C
C
G
F
X
fs
G
mod
g1ss
dss
p
p
min.
45
96
96
-
-
-
-
-
-
-
-
Values
100
typ.
1.9
1.1
1.3
1.7
42
24
31
86
-
-
max.
Feb-27-2004
BG3140...
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
-