BG3140R Infineon Technologies AG, BG3140R Datasheet - Page 5

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BG3140R

Manufacturer Part Number
BG3140R
Description
DUAL N-Channel MOSFET Tetrode
Manufacturer
Infineon Technologies AG
Datasheet
Gate 1 forward transconductance
g
V
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
DS
=
mS
mA
= 5V, V
= 5V, V
40
30
25
20
15
10
13
11
10
5
0
9
8
7
6
5
4
3
2
1
0
0
0
(I
D
0.5
)
4
G2S
G2S
1
8
D
2V
= Parameter
= 4V, R
1.5
=
12
2
(V
16
2.5V
GG
2.5
G1
20
)
= 80k
3
24
3V
3.5
28 mA
3.5V
4
I
V
4V
D
V
GG
36
5
5
Drain current I
V
V
Drain current I
V
R
DS
G2S
G2S
G1
mA
mA
= 5V
= Parameter in k
20
16
14
12
10
22
18
16
14
12
10
= Parameter
= 4V
8
6
4
2
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
1
D
D
2
=
= (V
(V
3
1
GG
G1S
1.2 1.4 1.6 1.8 V
)
4
)
Feb-27-2004
5
BG3140...
V
V
V
70
80
100
120
4V
3V
2.5V
2V
GG
G1S
2.2
=V DS
7

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