2SD2012_03 STMICROELECTRONICS [STMicroelectronics], 2SD2012_03 Datasheet
2SD2012_03
Related parts for 2SD2012_03
2SD2012_03 Summary of contents
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HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS GENERAL PURPOSE POWER AMPLIFIERS GENERAL PURPOSE SWITCHING DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package inteded for power ...
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THERMAL DATA R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter (BR)CEO Breakdown Voltage ( ...
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DC Current Gain Base Emitter On Voltage Collector Emitter Saturation Voltage 2SD2012 3/5 ...
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DIM. MIN. A 4.50 B 2.34 D 2.56 E 0. 2. 9.45 L6 15.67 L7 8.99 L8 Dia 3.08 4/5 TO-220F MECHANICAL DATA mm TYP. MAX. 4.90 2.74 2.96 0.50 ...
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