2SK879_07 TOSHIBA [Toshiba Semiconductor], 2SK879_07 Datasheet
2SK879_07
Manufacturer Part Number
2SK879_07
Description
Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK879_07.pdf
(4 pages)
General Purpose and Impedance Converter and
Condenser Microphone Applications
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
High breakdown voltage: V
High input impedance: I
Low noise: NF = 0.5dB (typ.) (R
Small package
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Note: I
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Characteristics
Characteristics
classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
GSS
GDS
= −1.0 nA (max) (V
G
(Ta = 25°C)
= −50 V
= 100 kΩ, f = 120 Hz)
(Ta = 25°C)
V
V
Symbol
Symbol
GS (OFF)
(BR) GDS
V
⎪Y
I
I
C
T
C
GSS
DSS
P
NF
GDS
I
T
stg
rss
G
iss
fs
D
j
(Note)
⎪
2SK879
V
V
V
V
V
V
V
V
R
GS
GS
DS
DS
DS
DS
DS
GD
DS
G
−55~125
= 100 kΩ, f = 120 Hz
= −30 V)
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 10 V, V
= 15 V, V
= −30 V, V
= −10 V, I
−50
100
125
10
1
G
= −100 μA
Test Condition
D
GS
GS
GS
GS
D
= 0.1 μA
DS
= 0, f = 1 MHz
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0
= 0
Unit
mW
mA
°C
°C
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.4
Min
−50
0.3
1.2
⎯
⎯
⎯
⎯
Typ.
8.2
2.6
0.5
⎯
⎯
⎯
⎯
⎯
2-2E1B
SC-70
2007-11-01
―
−1.0
−5.0
Max
6.5
⎯
⎯
⎯
⎯
⎯
2SK879
Unit: mm
Unit
mA
mS
nA
pF
pF
dB
V
V
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2SK879_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: V GDS • High input impedance −1.0 nA (max) (V GSS • Low noise ...
Page 2
2 2SK879 2007-11-01 ...
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3 2SK879 2007-11-01 ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...