HY57V281620ELT Hynix Semiconductor, HY57V281620ELT Datasheet
HY57V281620ELT
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HY57V281620ELT Summary of contents
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Synchronous DRAM based 4Bank x16 I/O Document Title 4Bank 16bits Synchronous DRAM Revision History Revision No. 1.0 First Version Release 1.1 1. Corrected PIN ASSIGNMENT A12 to NC This document is a general ...
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... HY57V281620E(L)T(P)-7 HY57V281620E(L)T(P)-H Note: 1. HY57V281620ET Series: Normal power, Leaded. 2. HY57V281620ELT Series: Low power, Leaded. 3. HY57V281620ETP Series: Normal power, Lead Free. 4. HY57V281620ELTP Series: Low power, Lead Free. Rev. 1.1 / Jan. 2005 Synchronous DRAM Memory 128Mbit (8Mx16bit) • Auto refresh and self refresh • 4096 Refresh cycles / 64ms • ...
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PIN ASSIGNMENTS VDD 1 DQ0 2 VDDQ 3 DQ1 4 DQ2 5 VSSQ 6 DQ3 7 DQ4 8 VDDQ 9 DQ5 10 DQ6 11 VSSQ 12 DQ7 13 VDD 14 LDQM 15 /WE 16 /CAS 17 /RAS 18 /CS 19 ...
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PIN DESCRIPTION SYMBOL TYPE CLK Clock CKE Clock Enable CS Chip Select BA0, BA1 Bank Address A0 ~ A11 Address Row Address Strobe, RAS, CAS, WE Column Address Strobe, Write Enable UDQM, LDQM Data Input/Output Mask DQ0 ~ DQ15 Data ...
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FUNCTIONAL BLOCK DIAGRAM 2Mbit x 4banks x 16 I/O Synchronous DRAM Self refresh logic & timer CLK Row Active CKE CS RAS Refresh CAS Column Active WE U/LDQM Bank Select Address A0 Register A1 A11 BA1 BA0 Rev. 1.1 / ...
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BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A11 A10 Code A9 Write Mode 0 Burst Read and Burst Write 1 Burst Read and Single Write CAS Latency CAS Latency ...
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ABSOLUTE MAXIMUM RATING Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative to VSS Voltage on VDD relative to VSS Short Circuit Output Current Power Dissipation Soldering Temperature / Time DC OPERATING CONDITION Parameter Power Supply Voltage Input High ...
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CAPACITANCE ( Parameter Input capacitance Data input / output capacitance DC CHARACTERISTICS I Parameter Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Note 3.3V, All other ...
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... Specified values are measured with the output open DD1 DD4 2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II 3. HY57V281620ET(P) Series: Normal Power HY57V281620ELT(P) Series: Low Power Rev. 1.1 / Jan. 2005 Synchronous DRAM Memory 128Mbit (8Mx16bit ...
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AC CHARACTERISTICS I Parameter CAS Latency=3 System Clock Cycle Time CAS Latency=2 Clock High Pulse Width Clock Low Pulse Width CAS Latency=3 Access Time From Clock CAS Latency=2 Data-out Hold Time Data-Input Setup Time Data-Input Hold Time Address Setup Time ...
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AC CHARACTERISTICS II Parameter RAS Cycle Time Operation RAS Cycle Time Auto Refresh RAS to CAS Delay RAS Active Time RAS Precharge Time RAS to RAS Bank Active Delay CAS to CAS Delay Write Command to Data-In Delay Data-in to ...
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COMMAND TRUTH TABLE Command CKEn-1 Mode Register Set H No Operation H Bank Active H Read H Read with Autoprecharge Write H Write with Autoprecharge Precharge All Banks H Precharge selected Bank Burst Stop H DQM H Auto Refresh H ...
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PACKAGE INFORMATION 400mil 54pin Thin Small Outline Package 22.327(0.8790) 22.149(0.8720) 0.150(0.0059) 0.050(0.0020) 0.400(0.016) 0.80(0.0315)BSC 0.300(0.012) Rev. 1.1 / Jan. 2005 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L)T(P) Series UNIT : mm(inch) 11.938(0.4700) 11.735(0.4620) 10.262(0.4040) 10.058(0.3960) 5deg 0.597(0.0235) 0deg 0.406(0.0160) 1.194(0.0470) 0.991(0.0390) ...