ATF-10100-GP3 HP [Agilent(Hewlett-Packard)], ATF-10100-GP3 Datasheet

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ATF-10100-GP3

Manufacturer Part Number
ATF-10100-GP3
Description
0.5-12 GHz Low Noise Gallium Arsenide FET
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
1.ATF-10100-GP3.pdf (4 pages)
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
• Low Bias:
• High Associated Gain:
• High Output Power:
Description
The ATF-10100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Electrical Specifications, T
Note:
1. RF performance is determined by packaging and testing 10 devices per wafer.
Symbol
NF
G
P
G
g
I
V
DSS
0.5 dB Typical at 4 GHz
V
14.0 dB Typical at 4 GHz
21.0 dBm Typical P
m
1 dB
P
A
1 dB
DS
O
= 2 V, I
Optimum Noise Figure: V
Gain @ NF
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain: V
Transconductance: V
Saturated Drain Current: V
Pinchoff Voltage: V
DS
DS
= 4 V, I
= 25 mA
O
DS
1 dB
; V
= 70 mA
Parameters and Test Conditions
DS
at 4 GHz
= 2 V, I
DS
DS
= 2 V, I
= 2 V, V
DS
A
CE
DS
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
DS
= 25 C
= 25 mA
= 2 V, I
= 4 V, I
DS
= 2 V, V
= 1 mA
GS
= 0 V
DS
DS
GS
= 25 mA
= 70 mA
= 0 V
5-19
[1]
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
ATF-10100
Chip Outline
mmho
Units Min.
dBm
mA
dB
dB
dB
dB
dB
dB
dB
V
S
G
12.0
-3.0
80
70
D
Typ. Max.
G
0.55
17.0
14.0
12.0
21.0
15.0
140
130
-1.3
5965-8702E
0.4
0.8
S
180
-0.8
0.7

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ATF-10100-GP3 Summary of contents

Page 1

... DS • High Associated Gain: 14.0 dB Typical at 4 GHz • High Output Power: 21.0 dBm Typical GHz 1 dB Description The ATF-10100 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor Electrical Specifications Symbol Parameters and Test Conditions NF Optimum Noise Figure: V ...

Page 2

... Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number ATF-10100-GP3 ATF-10100 Noise Parameters: Freq GHz dB 1.0 0.4 2.0 0.4 4.0 0.55 6.0 0.8 8.0 1.0 ATF-10100 Typical Performance ...

Page 3

Typical Scattering Parameters, Freq MHz Mag. Ang. 1.0 .93 -46 17.7 2.0 .83 -78 15.6 3.0 .78 -94 13.9 4.0 .72 -104 12.4 5.0 .70 -120 11.2 6.0 .68 -139 10.0 7.0 .71 -157 8.0 .72 168 9.0 ...

Page 4

... ATF-10100 Chip Dimensions 218 m 8.58 mil 218 m 8.58 mil 1.26 mil 218 m 8.58 mil 304 mil Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au. 163 m 6.42 mil 279 mil 5-22 ...

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