ATF-13100-GP3 HP [Agilent(Hewlett-Packard)], ATF-13100-GP3 Datasheet
ATF-13100-GP3
Manufacturer Part Number
ATF-13100-GP3
Description
2-18 GHz Low Noise Gallium Arsenide FET
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet
1.ATF-13100-GP3.pdf
(3 pages)
2–18 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
• High Associated Gain:
• High Output Power:
Description
The ATF-13100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
chip. This device is designed for
use in low noise, wideband
amplifier and oscillator applica-
tions in the 2-18 GHz frequency
range.
Electrical Specifications, T
Note:
1. RF performance is determined by assembling and testing 10 samples per wafer.
Symbol
NF
G
P
G
g
I
V
DSS
1.1 dB Typical at 12 GHz
9.5 dB Typical at 12 GHz
17.5 dBm Typical P
m
1 dB
P
1 dB
A
O
Optimum Noise Figure: V
Gain @ NF
Power Output @ 1 dB Gain Compression
V
1 dB Compressed Gain; V
Transconductance: V
Saturated Drain Current; V
Pinchoff Voltage: V
DS
= 4 V, I
1 dB
O
DS
; V
= 40 mA
at 12 GHz
Parameters and Test Conditions
DS
= 2.5 V, I
DS
DS
= 2.5 V, I
= 2.5 V, V
A
DS
DS
DS
DS
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
The recommended mounting
procedure is to die attach at a
stage temperature of 300 C using
a gold-tin preform under forming
gas. Assembly can be preformed
with either wedge or ball bonding
using 0.7 mil gold wire. See also
“Chip Use” in the APPLICATIONS
section.
= 25 C
= 2.5 V, I
= 4 V, I
= 20 mA
= 2.5 V, V
DS
= 1 mA
GS
DS
= 0 V
DS
= 40 mA
GS
= 20 mA
= 0 V
5-33
[1]
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 15.0 GHz
f = 12.0 GHz dBm
f = 12.0 GHz
ATF-13100
Chip Outline
mmho
Units
S
mA
dB
dB
dB
dB
dB
dB
dB
V
Min.
-3.0
9.0
30
40
D
G
Typ. Max.
12.0
17.5
-1.5
0.8
1.1
1.5
9.5
8.0
8.5
5965-8694E
55
50
S
-0.8
1.2
90
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ATF-13100-GP3 Summary of contents
Page 1
... Typical at 12 GHz • High Output Power: 17.5 dBm Typical GHz 1 dB Description The ATF-13100 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applica- tions in the 2-18 GHz frequency range ...
Page 2
... V Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number ATF-13100-GP3 ATF-13100 Noise Parameters: Freq GHz dB 4.0 0.4 6.0 0.7 8.0 0.8 12.0 1.1 16.0 1.5 ATF-13100 Typical Performance ...
Page 3
... A model for this device is available in the DEVICE MODELS section. ATF-13100 Chip Dimensions 356 m 14 mil 50 m 1.97 mil D 118 m 4.65 mil 254 mil 1.97 mil Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au. ...