HY628400A-LLT2-55 Hynix Semiconductor, HY628400A-LLT2-55 Datasheet - Page 4

• Manufacturer Part Number: HY628400A-LLT2-55
• Description: 512K x8 bit 5.0V Low Power CMOS slow SRAM
• Manufacturer: Hynix Semiconductor

RECOMMENDED DC OPERATING CONDITION
T
Vcc
Vss
V
V
Note :
1. V
DC ELECTRICAL CHARACTERISTICS
T
I
I
Icc
I
I
I
V
V
Note : Typical values are at Vcc = 5.0V, T
CAPACITANCE
Temp = 25 C, f= 1.0MHz
C
C
Note : This parameter is sampled and not 100% tested
Symbol
Rev 07 / Apr. 2001
LI
LO
CC1
SB
SB1
Symbol
A
IH
IL
A
OL
OH
IN
OUT
Symbol
= 0¡ É to 70¡ É ( Normal)/-25 C to 85 C (Extended) /-40 C to 85 C (Industrial), unless otherwise specified.
= 0¡ É to 70¡ É ( Normal)/-25 C to 85 C (Extended) /-40 C to 85 C (Industrial), unless otherwise specified.
IL
= -1.5V for pulse width less than 30ns and not 100% tested.
Input Leakage Current
Output Leakage Current
Operating Power Supply
Current
Average Operating Current
TTL Standby Current
(TTL Input)
Standby Current
(CMOS Input)
Output Low Voltage
Output High Voltage
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Capacitance
Output Capacitance
Parameter
Parameter
Parameter
-0.5
Min.
4.5
2.2
V
V
0
Condition
IN
I/O
(1)
A
= 0V
= 25 C
= 0V
Vss < V
Vss < V
/
/CS = V
V
/CS = V
Min Duty Cycle = 100%,
V
/CS = V
V
/CS > Vcc - 0.2V,
V
V
I
I
OE
OL
OH =
IN
IN
IN
IN
IN
= 2.1mA
Typ.
= V
= V
= V
> Vcc - 0.2V or
< Vss + 0.2V
=
5.0
-1mA
0
V
-
-
IH
IH
IH
IH
IN
OUT
IL
IL
IH
Test Condition
,
or /WE = V
or V
or V
or V
< Vcc
Max.
< Vcc, /CS = V
6
8
Vcc+0.5
IL,
IL,
IL
Max.
5.5
0.8
I
I
0
I/O =
I/O =
IL
0mA
0mA
L
LL
L-E/I
LL-E/I
Unit
pF
pF
Unit
IH
V
V
V
V
or
Min.
2.4
-1
-1
-
-
-
-
-
-
-
-
HY628400A Series
Typ.
-
-
-
-
-
-
-
-
Max.
100
100
0.4
10
60
30
50
1
1
2
-
Unit
UA
UA
MA
MA
MA
uA
uA
uA
uA
V
V
3