SP000219536 INFINEON [Infineon Technologies AG], SP000219536 Datasheet

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SP000219536

Manufacturer Part Number
SP000219536
Description
Smart High-Side Power Switch
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Features
Smart High-Side Power Switch
for Industrial Applications
1 Channel: 1 x 200m
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS
Providing embedded protective functions.
Short circuit protection
Current limitation
Overload protection
Overvoltage protection
Undervoltage shutdown with auto-
Switching inductive loads
Clamp of negative voltage at output
CMOS compatible input
Thermal shutdown with restart
ESD - Protection
Loss of GND and loss of V
Very low standby current
Reverse battery protection with external resistor
Improved electromagnetic compatibility (EMC)
(including load dump)
restart and hysteresis
with inductive loads
All types of resistive, inductive and capacitive loads
µC compatible power switch for 12 V and 24 V DC industrial applications
Replaces electromechanical relays and discrete circuits
bb
protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Operating temperature
Page 1
technology.
V
V
R
T
bb(AZ)
bb(on)
a
ON
PG-SOT223
-30...+85 °C
12...45
2006-03-09
ITS 4141N
200
47
V
V
m

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SP000219536 Summary of contents

Page 1

Smart High-Side Power Switch for Industrial Applications 1 Channel 200m Features Short circuit protection Current limitation Overload protection Overvoltage protection (including load dump) Undervoltage shutdown with auto- restart and hysteresis Switching inductive loads Clamp of negative voltage at ...

Page 2

Block Diagram ESD Pin Symbol OUT 1 GND Vbb 4 Voltage Overvoltage Current source protection limit V Logic Charge pump Limit for Voltage unclamped sensor Level shifter ind. loads Rectifier Logic GND 2 ...

Page 3

Maximum Ratings Parameter 25°C, unless otherwise specified j Supply voltage 2) Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Reverse current through GND-pin Junction temperature Operating temperature Storage ...

Page 4

Electrical Characteristics Parameter -40...125 ° 15...30 V unless otherwise specified j bb Thermal Characteristics Thermal resistance @ min. footprint Thermal resistance @ 6 cm Thermal resistance, junction - soldering point Load Switching Capabilities and Characteristics ...

Page 5

Electrical Characteristics Parameter -40...125 ° 15...30 V unless otherwise specified j bb Operating Parameters Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis bb(under) bb(u rst) bb(under) Standby current = -40...85 ...

Page 6

Electrical Characteristics Parameter -40...125 ° 15...30 V unless otherwise specified j bb Input 1) Continuous input voltage Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current V 1,8 V ...

Page 7

EMC-Characteristics All EMC-Characteristics are based on limited number of sampels and no part of production test. Test Conditions: If not other specified the test circuitry is the minimal functional configuration without any external components for protection or filtering. Supply voltage: ...

Page 8

Conducted Emission Acc. IEC 61967 150 Typ. V -Pin Emission at DC-On with 150 -matching network ...

Page 9

Conducted Susceptibility Acc. 47A/658/CD IEC 62132-4 (Direct Power Injection) Direct Power Injection: Failure criteria: Typ -Pin Susceptibility at DC-On/Off Typ. V ...

Page 10

Terms OUT PROFET V IN GND GND R GND Input circuit (ESD protection The use of ESD zener diodes ...

Page 11

GND disconnect PROFET GND GND GND disconnect with GND pull OUT PROFET GND GND disconnect with charged inductive load V bb ...

Page 12

Typ. transient thermal impedance 6cm heatsink area thJA p Parameter D=0,5 D=0 D=0,1 D=0,05 D=0,02 D=0,01 D ...

Page 13

Typ. turn on time 100 µ -40 - Typ. slew rate on dV/ ...

Page 14

Typ. initial peak short circuit current limit 20V; t L(SCp 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 - Typ. initial peak short ...

Page 15

Typ. input current µ 2.5 5 7.5 10 Typ. input threshold voltage 25°C IN(th ...

Page 16

Maximum allowable inductive switch-off energy, single pulse 125° jstart 2.5 J 1.5 1 0.5 0 0.2 0.4 0.6 0.8 Typ. input delay time at switch f(V ) d(Vbbon) ...

Page 17

Timing diagrams Figure 1a: Vbb turn on d(Vbbon) Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition IN V OUT 90 dV/dton 10 Figure 2b: Switching a ...

Page 18

Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling IN V OUT Output short to GND I I L(SCp L(SCr) Heating up of the chip may require several milliseconds, depending on external conditions. ...

Page 19

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. ITS 4141N SP000219536 1.6 ±0.1 0.1 max ...

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