MT5C2561C-35L/883C AUSTIN [Austin Semiconductor], MT5C2561C-35L/883C Datasheet

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MT5C2561C-35L/883C

Manufacturer Part Number
MT5C2561C-35L/883C
Description
MT5C2561 SRAM MEMORY ARRAY
Manufacturer
AUSTIN [Austin Semiconductor]
Datasheet
256K x 1 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
• SMD 5962-88725
• SMD 5962-88544
• MIL-STD-883
FEATURES
• High Speed: 35, 45, 55, and 70
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power, CMOS double-metal
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
OPTIONS
• Timing
• Package(s)
• Operating Temperature Ranges
• 2V data retention/low power
SPECIFICATIONS
process
35ns access
45ns access
55ns access
70ns access
Ceramic DIP (300 mil)
Ceramic LCC
Industrial (-40
Military (-55
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
www.austinsemiconductor.com
please visit our web site at
o
C to +125
o
C to +85
o
o
C)
C)
MARKING
L
C
EC
IT
XT
-35
-45
-55*
-70*
No. 106
No. 204
GENERAL DESCRIPTION
high-speed, low-power CMOS and are fabricated using double-
layer metal, double-layer polysilicon technology.
Austin Semiconductor offers chip enable (CE\) on all organiza-
tions. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x1 configuration
features separate data input and output.
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power re-
quirements.
ply and all inputs and outputs are fully TTL compatible.
The Austin Semiconductor SRAM family employs
For flexibility in high-speed memory applications,
Writing to these devices is accomplished when write
These devices operate from a single +5V power sup-
PIN ASSIGNMENT
A10
A11
A14
A15
NC
NC
A9
A0
Q
28-Pin LCC (EC)
10
11
12
24-Pin DIP (C)
WE\
A10
A11
A14
A15
Vss
4
5
6
7
8
9
(Top View)
A6
A7
A8
A9
A0
Q
(300 MIL)
1
2
3
4
5
6
7
8
9
10
11
12
13 14 15 16 17
3 2 1 28 27
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A5
A4
A3
A2
A1
A17
A16
A13
A12
D
CE\
26
25
24
23
22
21
20
19
18
MT5C2561
NC
A4
A3
A2
A1
A17
A16
A13
NC

Related parts for MT5C2561C-35L/883C

MT5C2561C-35L/883C Summary of contents

Page 1

SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 FEATURES • High Speed: 35, 45, 55, and 70 • Battery Backup: 2V data retention • Low power standby • High-performance, ...

Page 2

FUNCTIONAL BLOCK DIAGRAM A13 A14 A15 A16 A17 A0 MEMORY ARRAY COLUMN DECODER TRUTH TABLE MODE STANDBY READ WRITE V GND CC 262,144-BIT A9 A10 A11 A12 CE\ WE\ DQ POWER H ...

Page 3

ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Vss..................................-0.5V to +7V Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V Voltage Applied to Q.........................................................-0.5V to +6V Storage Temperature......................................................-65 Power Dissipation..............................................................................1W Short Circuit Output Current.........................................................50mA Lead Temperature (soldering 10 seconds)....................................+260 ...

Page 4

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS o o (Note 5) (-55 C < T < 125 DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip ...

Page 5

AC TEST CONDITIONS Input pulse levels ...................................... Vss to 3.0V Input rise and fall times ......................................... 5ns Input timing reference levels ................................ 1.5V Output reference levels ....................................... 1.5V Output load ................................. See Figures 1 and 2 NOTES 1. All voltages ...

Page 6

ADDRESS DQ PREVIOUS DATA VALID CE\ t tLZCE LZCE DQ t tPU PU Icc READ CYCLE NO tRC tRC RC VALID t tAA AA t tOH READ CYCLE NO tRC tRC RC ...

Page 7

ADDRESS t tAS CE ...

Page 8

MECHANICAL DEFINITIONS* ASI Case #106 (Package Designator C) SMD #5962-88544 & #5962-88725, Case Outline L D Pin 1 NOTE SYMBOL NOTE: These dimensions are per the SMD. ASI's package ...

Page 9

ASI Case #204 (Package Designator EC) SMD# 5962-88544, Case Outline SYMBOL NOTE: These dimensions are per the SMD. ASI's package dimensional ...

Page 10

... ORDERING INFORMATION EXAMPLE: MT5C2561C-45L/IT Device Package Speed Options** Process Number Type ns MT5C2561 C -35 MT5C2561 C -45 MT5C2561 C -55 MT5C2561 C -70 *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS Data Retention/Low Power EXAMPLE: MT5C2561EC-70/XT Device Number L /* ...

Page 11

... ASI Package Designator C ASI Part # MT5C2561C-35/883C MT5C2561C-45/883C MT5C2561C-55/883C MT5C2561C-70/883C MT5C2561C-35L883C MT5C2561C-45L883C MT5C2561C-55L883C MT5C2561C-70L883C * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. CROSS REFERENCE* SMD Part # ASI Part # ...

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