K6X1008C2D-B Samsung semiconductor, K6X1008C2D-B Datasheet

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K6X1008C2D-B

Manufacturer Part Number
K6X1008C2D-B
Description
128Kx8 bit Low Power CMOS Static RAM
Manufacturer
Samsung semiconductor
Datasheet

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K6X1008C2D Family
Document Title
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
Revision No.
128Kx8 bit Low Power CMOS Static RAM
0.0
0.1
0.2
0.3
1.0
History
Initial draft
Revised
- Deleted 32-TSOP1-0820R Package Type.
- Added Commercial product.
Revised
- Added Lead Free 32-SOP-525 Product
Revised
- Added Lead Free 32-TSOP1-0820F Product
Finalized
- Changed I
- Changed I
- Changed I
- Changed I
- Changed I
CC
CC
SB
DR
DR
2 from 35mA to 25mA
(industrial)
(Automotive)
from 3mA to 0.4mA
from 10mA to 5mA
from 15 A to 10 A
from 25 A to 20 A
1
Draft Data
July 15, 2002
December 4, 2002
May 13, 2003
June 21, 2003
September 16, 2003
CMOS SRAM
September 2003
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Final
Revision 1.0

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K6X1008C2D-B Summary of contents

Page 1

... K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product. 0.2 Revised - Added Lead Free 32-SOP-525 Product 0.3 Revised - Added Lead Free 32-TSOP1-0820F Product 1.0 Finalized - Changed I from 10mA to 5mA ...

Page 2

... Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 32-DIP-600, 32-SOP-525, 32-SOP-525, 32-TSOP1-0820F PRODUCT FAMILY Operating Product Family Temperature K6X1008C2D-B Commercial(0~70 C) K6X1008C2D-F Industrial(-40~85 C) K6X1008C2D-Q Automotive(-40~125 C) 1. The parameters are tested with 50pF test load PIN DESCRIPTION ...

Page 3

... Automotive Products(-40~125 C) Part Name Function K6X1008C2D-GQ55 32-SOP, 55ns, L K6X1008C2D-GQ70 32-SOP, 70ns, L K6X1008C2D-TQ55 32-TSOP-F, 55ns, L K6X1008C2D-TQ70 32-TSOP-F, 70ns, L Mode Power Deselected Standby Deselected Standby Output Disabled Active Read Active Write Active Unit Remark K6X1008C2D-B C K6X1008C2D-F C K6X1008C2D-Q Revision 1.0 September 2003 ...

Page 4

... CMOS SRAM Typ Max Unit 5.0 5 Vcc+0.5 - 0.8 V Min Max Unit - Min Typ Max Unit - =Vss to Vcc - Read - - 5 0.2V, CS Vcc-0.2V IH 0.4 2 0.4 K6X1008C2D K6X1008C2D K6X1008C2D Revision 1.0 September 2003 ...

Page 5

... WHZ Test Condition 1) CS Vcc-0.2V 1 K6X1008C2D-B 1) Vcc=3.0V, CS Vcc-0.2V K6X1008C2D-F 1 K6X1008C2D-Q See data retention waveform 5 CMOS SRAM =-40~125 Speed Bins Units 55ns 70ns Max Min Max - ...

Page 6

... K6X1008C2D Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address High-Z Data out NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...

Page 7

... K6X1008C2D Family TIMING WAVEFORM OF WRITE CYCLE(1) Address Data in Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address Data in Data out (WE Controlled CW( CW(2) t WP(1) t AS( Data Valid t WHZ (CS Controlled CW(2) AS( WP( Data Valid ...

Page 8

... K6X1008C2D Family TIMING WAVEFORM OF WRITE CYCLE(3) Address Data in Data out NOTES (WRITE CYCLE write occurs during the overlap of a low CS CS going high and WE going low: A write end at the earliest transition among measured from the begining of write to the end of write. ...

Page 9

... K6X1008C2D Family PACKAGE DIMENSIONS 32 DUAL INLINE PACKAGE (600mil) #32 13.60 0.20 0.535 0.008 #1 1. 0.075 32 PLASTIC SMALL OUTLINE PACKAGE (525mil) #32 #1 20.87 0.822 20.47 0.806 +0.100 0.41 -0.050 0. +0.004 0.016 0.028 -0.002 42.31 MAX 1.666 41.91 0.20 1.650 0.008 0.46 0.10 0.018 0.004 1.52 2.54 0.10 0.060 0.100 0.004 #17 14.12 0.30 0.556 0.012 #16 2.74 0.20 MAX 0.108 0.008 3.00 0.118 0.20 0.008 1 ...

Page 10

... K6X1008C2D Family PACKAGE DIMENSIONS 32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F) +0.10 0.20 -0.05 +0.004 0.008 -0.002 #1 0.50 0.0197 #16 0.25 TYP 0.010 0~8 0.45 ~0.75 0.018 ~0.030 20.00 0.20 0.787 0.008 18.40 0.10 0.724 0.004 10 CMOS SRAM Units: millimeters(inches) #32 0. 0.010 8.40 MAX 0.331 #17 1.00 0.05 0.10 MIN 0.039 0.002 0.004 1.20 MAX 0.047 +0.10 0.15 -0.05 +0.004 0.006 -0.002 0. 0.020 Revision 1.0 ...

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