STP33N10FI STMICROELECTRONICS [STMicroelectronics], STP33N10FI Datasheet

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STP33N10FI

Manufacturer Part Number
STP33N10FI
Description
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Part Number
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Quantity
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Part Number:
STP33N10FI
Manufacturer:
ST
Quantity:
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Part Number:
STP33N10FI
Manufacturer:
ST
0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
July 1993
STP33N10
STP33N10FI
Symbol
I
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
APPLICATION ORIENTED
CHARACTERIZATION
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
V
D M
V
V
V
P
T
DG R
I
I
T
ISO
stg
D S
GS
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
100 V
100 V
V
= 0.045
DSS
< 0.06
< 0.06
Parameter
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
33 A
18 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
TO-220
STP33N10
132
150
33
23
1
1
-65 to 175
2
Value
3
100
100
175
20
STP33N10FI
STP33N10FI
STP33N10
ISOWATT220
2000
132
0.3
18
12
45
1
W/
2
Unit
o
o
W
A
V
V
V
A
A
V
3
C
C
o
1/10
C

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STP33N10FI Summary of contents

Page 1

... TO-220 INTERNAL SCHEMATIC DIAGRAM STP33N10 = 100 132 o C 150 1 STP33N10 STP33N10FI ISOWATT220 Value Unit STP33N10FI 100 V 100 132 0 2000 V o -65 to 175 C o 175 C 1/10 ...

Page 2

STP33N10/FI THERMAL DATA R Thermal Resistance Junction-case thj-cas e R Thermal Resistance Junction-ambient thj- amb R Thermal Resistance Case-sink t hc- sin k T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter t Turn-on Time d(on) t Rise Time r (di/dt) Turn-on Current Slope on Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise ...

Page 4

STP33N10/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP33N10/FI 5/10 ...

Page 6

STP33N10/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit ...

Page 8

STP33N10/FI TO-220 MECHANICAL DATA DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 ...

Page 9

ISOWATT220 MECHANICAL DATA mm DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø ...

Page 10

STP33N10/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from ...

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