STPS20120C_07 STMICROELECTRONICS [STMicroelectronics], STPS20120C_07 Datasheet

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STPS20120C_07

Manufacturer Part Number
STPS20120C_07
Description
Power Schottky rectifier
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
Main product characteristics
Feature and benefits
Description
Dual center tap Schottky rectifier suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I
this device is intended to be used in notebook and
LCD adaptors, desktop SMPS, providing in these
applications a margin between the remaining
voltages applied on the diode and the voltage
capability of the diode.
Table 1.
1.
May 2007
Symbol
I
High junction temperature capability
Avalanche rated
Low leakage current
Good trade-off between leakage current and
forward voltage drop
F(RMS)
V
I
P
dPtot
---------------
I
F(AV)
T
dTj
FSM
RRM
ARM
T
stg
j
<
------------------------- -
Rth j a
T
V
V
I
F(AV)
j(max)
F(typ)
RRM
(
1
Repetitive peak reverse voltage
RMS forward current
Average forward current,
δ = 0.5
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Absolute ratings (limiting values, per diode)
)
condition to avoid thermal runaway for a diode on its own heatsink
2
PAK and TO-220FPAB,
2 x 10 A
175° C
0.54 V
120 V
TO-220AB, I
TO-220FPAB
Parameter
2
PAK
(1)
Rev 2
Order code
T
T
T
T
t
t
p
p
c
c
c
c
= 10 ms Sinusoidal
= 1 µs T
= 150° C Per diode
= 145° C
= 125° C Per diode
= 100° C
STPS20120CT
STPS20120CFP
A2
STPS20120CR
STPS20120CT
A1
K
Part Number
TO-220AB
j
= 25° C
Per device
Per device
Power Schottky rectifier
A1
K
A2
K
STPS20120C
-65 to + 175
Value
4600
120
150
175
30
10
20
10
20
STPS20120CFP
STPS20120CR
STPS20120CFP
STPS20120CR
STPS20120CT
TO-220FPAB
Marking
I
2
PAK
A1
Unit
A1
° C
° C
W
V
A
A
A
K
K
www.st.com
A2
A2
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STPS20120C_07 Summary of contents

Page 1

Main product characteristics I F(AV) V RRM T j(max) V F(typ) Feature and benefits ■ High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop Description Dual center tap ...

Page 2

Characteristics 1 Characteristics Table 2. Thermal parameters Symbol R th(j-c) R th(c) When the diodes 1 and 2 are used simultaneously : T (diode 1) = P(diode Table 3. Static electrical characteristics (per diode) Symbol (1) I ...

Page 3

STPS20120C Figure 1. Average forward power dissipation versus average forward current (per diode) P (W) F(AV) 10 δ = 0.1 δ = 0.2 9 δ (A) F(AV ...

Page 4

Characteristics Figure 7. Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB & th(j-c) th(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse 0.1 t (s) p 0.0 1.E-03 1.E-02 Figure ...

Page 5

STPS20120C 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.8 Nm ● Maximum torque value: 1.0 Nm Table 4. TO-220AB dimensions H2 Dia Ref. ...

Page 6

Package information 2 Table 5. I PAK dimensions 6 STPS20120C Dimensions Ref. Millimeters Inches Min. Max. Min. A 4.40 4.60 0.173 A1 2.49 2.69 0.098 b 0.70 ...

Page 7

STPS20120C Table 6. TO-220FPAB dimensions order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked ...

Page 8

Ordering information 3 Ordering information Ordering type STPS20120CT STPS20120CR STPS20120CFP 4 Revision history Date 18-Feb-2005 03-May-2007 8/9 Marking Package STPS20120CT TO-220AB 2 STPS20120CR I PAK STPS20120CFP TO-220FPAB Revision 1 First issue 2 Reformatted to current standards. Added TO-220FPAB package. STPS20120C ...

Page 9

STPS20120C Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at ...

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