IRF7523D1PBF

Manufacturer Part NumberIRF7523D1PBF
DescriptionMICRO8/30V FETKY - MOSFET AND SCHOTTKY DIODE IN A MICRO 8 PACKAGE
ManufacturerInternational Rectifier Corp.
IRF7523D1PBF datasheet
 


Specifications of IRF7523D1PBF

Lead_time84Pack_quantity80
AnalogIRFIRF7523D1Comm_code85412900
EccnEAR99  
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®
Co-packaged HEXFET
and Schottky Diode
N-Channel HEXFET
Low V
Schottky Rectifier
F
Generation 5 Technology
Micro8
TM
Footprint
Description
TM
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
TM
The new Micro8
package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
TM
profile (<1.1mm) of the Micro8
will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (T
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance Ratings
Parameter
R
Junction-to-Ambient
JA
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
1.7A, di/dt
120A/µs, V
V
SD
DD
Pulse width
300µs; duty cycle
2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
www.irf.com
FETKY MOSFET / Schottky Diode
Power MOSFET
1
A
2
A
3
S
4
G
T op V ie w
= 25°C unless otherwise noted)
A
@10V
GS
, T
150°C
(BR)DSS
J
PD- 91647C
IRF7523D1
8
K
V
= 30V
DSS
7
K
R
= 0.11
6
DS(on)
D
5
D
Schottky Vf = 0.39V
TM
Micro8
TM
an ideal
Maximum
Units
2.7
A
2.1
21
1.25
W
0.8
10
W/°C
± 20
V
6.2
V/ns
-55 to +150
°C
Maximum
Units
100
°C/W
1
3/17/99