IRF7523D1PBF International Rectifier Corp., IRF7523D1PBF Datasheet

IRF7523D1PBF

Manufacturer Part Number

IRF7523D1PBF

Description

MICRO8/30V FETKY - MOSFET AND SCHOTTKY DIODE IN A MICRO 8 PACKAGE

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF7523D1PBF.pdf (8 pages)

Specifications of IRF7523D1PBF

Lead_time

Pack_quantity

Analog

IRFIRF7523D1

Comm_code

85412900

Eccn

EAR99

Current page: 1 of 8
Download datasheet (205Kb)

Description

The FETKY

designer an innovative board space saving solution for switching regulator

applications. Generation 5 HEXFETs utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area. Combining this technology

with International Rectifier's low forward drop Schottky rectifiers results in an

extremely efficient device suitable for use in a wide variety of portable electronics

applications like cell phone, PDA, etc.

The new Micro8

the smallest footprint available in an SOIC outline. This makes the Micro8

device for applications where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro8

environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings (T

Thermal Resistance Ratings

Notes:

www.irf.com

Parameter

dv/dt

Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)

Pulse width

When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

Co-packaged HEXFET

and Schottky Diode

N-Channel HEXFET

Low V

Generation 5 Technology

Micro8

@ T

STG

1.7A, di/dt

= 25°C

= 70°C

= 25°C

= 70°C

Schottky Rectifier

Footprint

family of co-packaged HEXFETs and Schottky diodes offer the

300µs; duty cycle

package, with half the footprint area of the standard SO-8, provides

120A/µs, V

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Junction-to-Ambient

will allow it to fit easily into extremely thin application

Power MOSFET

(BR)DSS

, T

= 25°C unless otherwise noted)

150°C

@10V

FETKY MOSFET / Schottky Diode

T op V ie w

an ideal

-55 to +150

Maximum

IRF7523D1

1.25

± 20

Maximum

2.7

2.1

0.8

6.2

100

Schottky Vf = 0.39V

DS(on)

DSS

Micro8

= 0.11

= 30V

Units

°C/W

Units

PD- 91647C

W/°C

V/ns

°C

3/17/99

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