IRFB4510PBF

Manufacturer Part NumberIRFB4510PBF
DescriptionTO220/MOSFET, 100V, 64A, 14.5 MOHM, 50 NC QG
ManufacturerInternational Rectifier Corp.
IRFB4510PBF datasheet
 


Specifications of IRFB4510PBF

Lead_time70Pack_quantity50
Comm_code85412900EccnEAR99
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Applications
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
l
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
l
Ruggedness
Fully Characterized Capacitance and Avalanche
l
SOA
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
l
Absolute Maximum Ratings
Symbol
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Peak Diode Recovery
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Avalanche Current
I
AR
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
R
Junction-to-Case
JC
R
Case-to-Sink, Flat Greased Surface
CS
R
Junction-to-Ambient, TO-220
JA
www.irf.com
G
Gate
Parameter
@ 10V (Silicon Limited)
GS
@ 10V (Silicon Limited)
GS
e
d
f
Parameter
i
i
IRFB4510PbF
HEXFET Power MOSFET
V
D
DSS
R
typ.
10.7m
DS(on)
max.
13.5m
I
D (Silicon Limited)
S
D
S
D
G
TO-220AB
IRFB4510PbF
G
D
Drain
Max.
62
44
250
140
0.95
± 20
3.2
-55 to + 175
300
x
x
10lb
in (1.1N
m)
130
See Fig. 14, 15, 22a, 22b,
Typ.
Max.
–––
1.05
0.50
–––
–––
62
100V
62A
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
4/10/12