IRFB4510PBF International Rectifier Corp., IRFB4510PBF Datasheet

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IRFB4510PBF

Manufacturer Part Number

IRFB4510PBF

Description

TO220/MOSFET, 100V, 64A, 14.5 MOHM, 50 NC QG

Manufacturer

International Rectifier Corp.

Datasheet

1.IRFB4510PBF.pdf (8 pages)

Specifications of IRFB4510PBF

Lead_time

70

Pack_quantity

50

Comm_code

85412900

Eccn

EAR99

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB4510PBF

Manufacturer:

AVAGO

Quantity:

3 441

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRFB4510PBF

Manufacturer:

IR

Quantity:

20 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFB4510PBF

Quantity:

9 000

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Benefits

l

l

l

l

www.irf.com

Applications

l

l

l

l

I

I

I

P

V

dv/dt

T

T

E

I

E

R

R

R

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

D

D

DM

AR

J

STG

D

GS

AS (Thermally limited)

AR

@ T

@ T

JC

CS

JA

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

SOA

@T

Symbol

Symbol

C

C

C

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient, TO-220

Parameter

Parameter

i

e

GS

GS

f

i

@ 10V (Silicon Limited)

@ 10V (Silicon Limited)

d

G

Gate

G

D

S

IRFB4510PbF

See Fig. 14, 15, 22a, 22b,

Typ.

0.50

–––

–––

V

R

I

D (Silicon Limited)

10lb

D

DSS

DS(on)

IRFB4510PbF

-55 to + 175

TO-220AB

x

in (1.1N

Max.

Drain

HEXFET Power MOSFET

0.95

250

140

± 20

300

130

3.2

62

44

D

G

typ.

max.

x

D

m)

S

Max.

1.05

–––

62

10.7m

13.5m

Source

100V

62A

S

Units

Units

W/°C

°C/W

V/ns

mJ

mJ

°C

W

A

V

A

4/10/12

1

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