IRFB7434PBF

Manufacturer Part NumberIRFB7434PBF
DescriptionTO220/MOSFET, 40V, 195A, 1.6 MOHM, 216 NC QG
ManufacturerInternational Rectifier Corp.
IRFB7434PBF datasheet
 

Specifications of IRFB7434PBF

Lead_time70Pack_quantity50
Comm_code85412900EccnEAR99
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Dynamic @ T
= 25°C (unless otherwise specified)
J
Symbol
Parameter
gfs
Forward Transconductance
Q
Total Gate Charge
g
Q
Gate-to-Source Charge
gs
Q
Gate-to-Drain ("Miller") Charge
gd
Q
Total Gate Charge Sync. (Q
sync
t
Turn-On Delay Time
d(on)
t
Rise Time
r
t
Turn-Off Delay Time
d(off)
t
Fall Time
f
C
Input Capacitance
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
C
eff. (ER)
Effective Output Capacitance (Energy Related)
oss
C
eff. (TR)
Effective Output Capacitance (Time Related)
oss
Diode Characteristics
Symbol
Parameter
I
Continuous Source Current
S
(Body Diode)
I
Pulsed Source Current
d
SM
(Body Diode)
V
Diode Forward Voltage
SD
dv/dt
Peak Diode Recovery
t
Reverse Recovery Time
rr
Q
Reverse Recovery Charge
rr
I
Reverse Recovery Current
RRM
www.irf.com
Min. Typ. Max. Units
211
–––
–––
216
–––
51
–––
77
- Q
)
–––
139
g
gd
–––
24
–––
68
–––
115
–––
68
––– 10820 –––
–––
1540
–––
1140
–––
1880
–––
2208
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.9
f
–––
5.0
–––
38
–––
37
–––
50
–––
50
–––
1.9
IRFB7434PbF
Conditions
–––
S
V
= 10V, I
= 100A
DS
D
324
I
= 100A
D
–––
V
=20V
g
DS
nC
–––
V
= 10V
GS
–––
I
= 100A, V
=0V, V
= 10V
D
DS
GS
–––
V
= 20V
DD
–––
I
= 30A
D
ns
–––
R
= 2.7Ω
g
G
–––
V
= 10V
GS
V
= 0V
GS
–––
V
= 25V
DS
–––
pF
ƒ = 1.0 MHz, See Fig. 5
–––
V
= 0V, V
= 0V to 32V
GS
DS
–––
V
= 0V, V
= 0V to 32V
GS
DS
Conditions
MOSFET symbol
317
showing the
A
integral reverse
1270
p-n junction diode.
1.3
V
T
= 25°C, I
= 100A, V
J
S
GS
–––
V/ns
T
= 175°C, I
= 100A, V
J
S
DS
–––
T
= 25°C
V
= 34V,
J
R
ns
–––
T
= 125°C
I
= 100A
J
F
di/dt = 100A/μs
–––
T
= 25°C
J
nC
–––
T
= 125°C
J
–––
A
T
= 25°C
J
i
, See Fig. 12
h
D
G
S
g
= 0V
= 40V
g
3