IRFB7437PBF

Manufacturer Part NumberIRFB7437PBF
DescriptionTO220/MOSFET, 40V, 195A, 2.0 MOHM, 150 NC QG
ManufacturerInternational Rectifier Corp.
IRFB7437PBF datasheet
 


Specifications of IRFB7437PBF

Lead_time70Pack_quantity50
Comm_code85412900EccnEAR99
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IRFB7437PbF
Absolute Maximum Ratings
Symbol
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current d
DM
P
@T
= 25°C
Maximum Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Peak Diode Recovery f
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy e
E
AS (Thermally limited)
E
(tested)
Single Pulse Avalanche Energy Tested Value k
AS
Avalanche Current d
I
AR
Repetitive Avalanche Energy d
E
AR
Thermal Resistance
Symbol
R
Junction-to-Case j
JC
R
Case-to-Sink, Flat Greased Surface
CS
R
Junction-to-Ambient j
JA
Static @ T
= 25°C (unless otherwise specified)
J
Symbol
Parameter
V
Drain-to-Source Breakdown Voltage
(BR)DSS
V
/T
Breakdown Voltage Temp. Coefficient
(BR)DSS
J
Static Drain-to-Source On-Resistance
R
DS(on)
V
Gate Threshold Voltage
GS(th)
I
Drain-to-Source Leakage Current
DSS
I
Gate-to-Source Forward Leakage
GSS
Gate-to-Source Reverse Leakage
R
Internal Gate Resistance
G
Notes:

Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
ƒ
Limited by T
, starting T
= 25°C, L = 0.069mH
Jmax
J
R
= 25, I
= 100A, V
=10V.
GS
G
AS
 100A, di/dt  1166A/μs, V
V
I
SD
DD
(BR)DSS
2
Parameter
@ 10V (Silicon Limited)
GS
@ 10V (Silicon Limited)
GS
@ 10V (Wire Bond Limited)
GS
Parameter
Min. Typ. Max. Units
40
–––
––– 0.029 –––
–––
1.5
–––
1.8
2.2
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.2
Pulse width  400μs; duty cycle  2%.
C
eff. (TR) is a fixed capacitance that gives the same charging time
oss
as C
while V
oss
C
eff. (ER) is a fixed capacitance that gives the same energy as
oss
C
while V
oss
ˆ
This value determined from sample failure population,
starting T
 175°C.
, T
J
Max.
250c
180
195
1000
230
1.5
± 20
3.0
-55 to + 175
300
10lbfxin (1.1Nxm)
350
500
See Fig. 14, 15, 22a, 22b
Typ.
Max.
–––
0.65
0.50
–––
–––
62
Conditions
–––
V
V
= 0V, I
= 250μA
GS
D
V/°C
Reference to 25°C, I
2.0
V
= 10V, I
= 100A
m
GS
D
–––
V
= 6.0V, I
= 50A
GS
D
3.9
V
V
= V
, I
= 150μA
DS
GS
D
1.0
μA
V
= 40V, V
= 0V
DS
GS
150
V
= 40V, V
= 0V, T
DS
GS
100
nA
V
= 20V
GS
-100
V
= -20V
GS
–––
is rising from 0 to 80% V
.
DS
DSS
is rising from 0 to 80% V
.
DS
DSS
= 25°C, L=0.095mH, R
= 25, I
= 100A, V
J
G
AS
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
= 1mAd
D
= 125°C
J
=10V
GS
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