BLF879P,112 Philips Semiconductors, BLF879P,112 Datasheet

BLF879P,112

Manufacturer Part Number

BLF879P,112

Description

BLF879P/LDMOST/TUBE-BULK

Manufacturer

Philips Semiconductors

Datasheet

1.BLF879P112.pdf (16 pages)

Specifications of BLF879P,112

Lead_time

Pack_quantity

Comm_code

85412900

Eccn

EAR99

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

Table 1.

RF performance at V

[1]

[2]



Mode of operation

RF performance in a common source 470 MHz to 860 MHz broadband test circuit

DVB-T (8k OFDM)

RF performance in a common source 860 MHz narrowband test circuit

2-tone, class-AB

DVB-T (8k OFDM)

BLF879P; BLF879PS

UHF power LDMOS transistor

Rev. 2 — 25 July 2012

Excellent ruggedness

Optimum thermal behavior and reliability, R

High power gain

High efficiency

Designed for broadband operation (470 MHz to 860 MHz)

Internal input matching for high gain and optimum broadband operation

Excellent reliability

Easy power control

Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Communication transmitter applications in the UHF band

Industrial applications in the UHF band

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

Application information

(MHz)

858

= 42 V unless otherwise specified.

= 860; f

= 860.1

(W)

200

L(AV)

th(j-c)

(W)

L(M)

= 0.15 K/W

(dB) (%) (dBc) (dBc)



IMD3

33

Product data sheet

IMD

31

32

shldr

[1]

PAR

(dB)

8.2

8.0

[2]

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