CAT28F010GI12T ON Semiconductor, CAT28F010GI12T Datasheet

CAT28F010GI12T

Manufacturer Part Number

CAT28F010GI12T

Description

PICC32

Manufacturer

ON Semiconductor

Datasheet

1.CAT28F010GI12T.pdf (16 pages)

Specifications of CAT28F010GI12T

Date_code

09+

Current page: 1 of 16
Download datasheet (380Kb)

Characteristics subject to change without notice

1 Megabit CMOS Flash Memory

FEATURES

DESCRIPTION

The CAT28F010 is a high speed 128K x 8-bit electrically

erasable and reprogrammable Flash memory ideally

suited for applications requiring in-system or after-sale

code updates. Electrical erasure of the full memory

contents is achieved typically within 0.5 second.

It is pin and Read timing compatible with standard

EPROM and EEPROM devices. Programming and

Erase are performed through an operation and verify

algorithm. The instructions are input via the I/O bus,

BLOCK DIAGRAM

Fast read access time: 90/120 ns

Low power CMOS dissipation:

–Active: 30 mA max (CMOS/TTL levels)

–Standby: 1 mA max (TTL levels)

–Standby: 100 A max (CMOS levels)

High speed programming:

–10 s per byte

–2 Sec Typ Chip Program

0.5 seconds typical chip-erase

12.0V

Stop timer for program/erase

A 0 –A 16

5% programming and erase voltage

VOLTAGE VERIFY

SWITCH

COMMAND

PROGRAM VOLTAGE

ERASE VOLTAGE

SWITCH

Y-DECODER

X-DECODER

using a two write cycle scheme. Address and Data are

latched to free the I/O bus and address bus during the

write operation.

The CAT28F010 is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 10 years. The device is available in JEDEC

approved 32-pin plastic DIP, 32-pin PLCC or 32-pin

TSOP packages.

Commercial, industrial and automotive

temperature ranges

On-chip address and data latches

JEDEC standard pinouts:

–32-pin DIP

–32-pin PLCC

–32-pin TSOP (8 x 20)

100,000 program/erase cycles

10 year data retention

Electronic signature

CE, OE LOGIC

second source

Licensed Intel

LATCH

DATA

I/O BUFFERS

1,048,576 BIT

I/O 0 –I/O 7

Y-GATING

MEMORY

ARRAY

SENSE

AMP

CAT28F010

Doc. No. MD-1019, Rev. G

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