TGF2961-SD TriQuint, TGF2961-SD Datasheet

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TGF2961-SD

Manufacturer Part Number
TGF2961-SD
Description
Manufacturer
TriQuint
Datasheets

Specifications of TGF2961-SD

Date_code
0733
Packing_info
SMD
Bias conditions: Vd = 8 V, Idq = 200 mA, Vg = -1.0 V Typical
20
15
10
31
30
29
5
0.6
900 MHz Application Board
0.7
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Performance
0.8
Frequency (GHz)
1 Watt DC-4 GHz Packaged HFET
Freq (GHz)
0.9
1
Gain
IRL
ORL
1.1
1.2
20
15
10
5
0
-5
-10
-15
-20
August 2007 © Rev A
The TGF2961-SD is a high performance 1-watt
Heterojunction GaAs Field Effect Transistor
(HFET) housed in a low cost SOT89 surface
mount package.
The device’s ideal operating point is at a drain bias
of 8 V and 200 mA. At this bias at 900 MHz when
matched into 50 ohms using external components,
this device is capable of 18 dB of gain, 30 dBm of
saturated output power, and 44 dBm of output IP3
Evaluation boards at 900 MHz, 1900 MHz and
2100 MHz available on request.
RoHS and Lead-Free compliant
Product Description
Key Features
Nominal 900 MHz Application Board Performance:
Primary Applications
Frequency Range: DC-4 GHz
TOI: 44 dBm
31 dBm Psat, 30 dBm P1dB
Gain: 18 dB
Input Return Loss: -15 dB
Output Return Loss: -7 dB
Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V
(Typical)
Package Dimensions: 4.5 x 4 x 1.5 mm
Cellular Base Stations
WiMAX
Wireless Infrastructure
IF & LO Buffer Applications
RFID
Datasheet subject to change without notice.
TGF2961-SD
1

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