SST25VF040B504CS2AF Silicon Storage Technology, Inc, SST25VF040B504CS2AF Datasheet

SST25VF040B504CS2AF

Manufacturer Part Number

SST25VF040B504CS2AF

Description

SOP-8

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST25VF040B504CS2AF.pdf (33 pages)

Specifications of SST25VF040B504CS2AF

Date_code

08+

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FEATURES:

• Single Voltage Read and Write Operations

• Serial Interface Architecture

• High Speed Clock Frequency

• Superior Reliability

• Low Power Consumption:

• Flexible Erase Capability

• Fast Erase and Byte-Program:

PRODUCT DESCRIPTION

The 25 series Serial Flash family features a four-wire, SPI-

compatible interface that allows for a low pin-count pack-

age which occupies less board space and ultimately lowers

total system costs. The SST25VF040B devices are

enhanced with improved operating frequency and even

lower power consumption. SST25VF040B SPI serial flash

memories are manufactured with SST proprietary, high-

performance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches.

S71295-05-000

– 2.7-3.6V

– SPI Compatible: Mode 0 and Mode 3

– Up to 50/80 MHz

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Read Current: 10 mA (typical)

– Standby Current: 5 µA (typical)

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Uniform 64 KByte overlay blocks

– Chip-Erase Time: 35 ms (typical)

– Sector-/Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 7 µs (typical)

10/09

SST25VF040B4Mb Serial Peripheral Interface (SPI) flash memory

4 Mbit SPI Serial Flash

SST25VF040B

http://store.iiic.cc/

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

• Auto Address Increment (AAI) Programming

• End-of-Write Detection

• Hold Pin (HOLD#)

• Write Protection (WP#)

• Software Write Protection

• Temperature Range

• Packages Available

• All devices are RoHS compliant

The SST25VF040B devices significantly improve perfor-

mance and reliability, while lowering power consumption.

The devices write (Program or Erase) with a single power

supply of 2.7-3.6V for SST25VF040B. The total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

The SST25VF040B device is offered in an 8-lead SOIC

(200 mils), 8-lead SOIC (150 mils), and 8-contact WSON

(6mm x 5mm) packages. See Figure 2 for pin assignments.

– Decrease total chip programming time over

– Software polling the BUSY bit in Status Register

– Busy Status readout on SO pin in AAI Mode

– Suspends a serial sequence to the memory

– Enables/Disables the Lock-Down function of the

– Write protection through Block-Protection bits in

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

– 8-lead SOIC (200 mils)

– 8-lead SOIC (150 mils)

– 8-contact WSON (6mm x 5mm)

Byte-Program operations

without deselecting the device

status register

These specifications are subject to change without notice.

Data Sheet

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