GLS29EE512-70-4I-EHE Greenliant, GLS29EE512-70-4I-EHE Datasheet

GLS29EE512-70-4I-EHE

Manufacturer Part Number

GLS29EE512-70-4I-EHE

Description

Manufacturer

Greenliant

Datasheet

1.GLS29EE512-70-4I-EHE.pdf (26 pages)

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Bonase Electronics (HK) Co., Limited

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GLS29EE512-70-4I-EHE

Manufacturer:

Greenlia

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Bonase Electronics (HK) Co., Limited

Part Number:

GLS29EE512-70-4I-EHE

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Greenliant

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Fast Page-Write Operation

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The GLS29EE512 is a 64K x8 CMOS, Page-Write

EEPROM manufactured with high-performance Super-

Flash technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and manu-

facturability compared with alternate approaches. The

GLS29EE512 writes with a single power supply. Internal

Erase/Program is transparent to the user. The

GLS29EE512 conforms to JEDEC standard pin assign-

ments for byte-wide memories.

Featuring

GLS29EE512 provides a typical Byte-Write time of 39

µsec. The entire memory, i.e., 64 KByte, can be written

page-by-page in as little as 2.5 seconds, when using

interface features such as Toggle Bit or Data# Polling to

indicate the completion of a Write cycle. To protect

against inadvertent write, the GLS29EE512 have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum

of applications, the GLS29EE512 is offered with a guar-

anteed Page-Write endurance of 10,000 cycles. Data

retention is rated at greater than 100 years.

– 4.5-5.5V for GLS29EE512

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical)

– Standby Current: 10 µA (typical)

– 128 Bytes per Page, 512 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 2.5 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

– 4.5-5.5V operation: 70 ns

512 Kbit (64K x8) Page-Write EEPROM

high

performance

GLS29EE512512Kb (x8) Page-Write, Small-Sector flash memories

GLS29EE512

Page-Write,

www.greenliant.com

the

• Automatic Write Timing

• End of Write Detection

• Hardware and Software Data Protection

• Product Identification can be accessed via

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

• All non-Pb (lead-free) devices are RoHS compliant

The GLS29EE512 is suited for applications that require

convenient and economical updating of program, config-

uration, or data memory. For all system applications, the

GLS29EE512 significantly improves performance and

reliability, while lowering power consumption. The

GLS29EE512 improves flexibility while lowering the cost

for program, data, and configuration storage applica-

tions.

To meet high density, surface mount requirements, the

GLS29EE512 is offered in 32-lead PLCC and 32-lead

TSOP packages. A 600-mil, 32-pin PDIP package is also

available. See Figures 1, 2, and 3 for pin assignments.

Device Operation

The Greenliant Page-Write EEPROM offers in-circuit elec-

trical write capability. The GLS29EE512 does not require

separate Erase and Program operations. The internally

timed Write cycle executes both erase and program trans-

parently to the user. The GLS29EE512 has industry stan-

dard optional Software Data Protection, which Greenliant

recommends always to be enabled. The GLS29EE512 is

compatible with industry standard EEPROM pinouts and

functionality.

– Internal V

– Toggle Bit

– Data# Polling

Software Operation

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 20mm)

– 32-pin PDIP

Generation

S71060-10-000

Data Sheet

05/10

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