GLS29EE010-70-4I-NHE Greenliant, GLS29EE010-70-4I-NHE Datasheet

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GLS29EE010-70-4I-NHE

Manufacturer Part Number
GLS29EE010-70-4I-NHE
Description
Manufacturer
Greenliant
Datasheet

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FEATURES:
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
PRODUCT DESCRIPTION
The GLS29EE010 is a 128K x8 CMOS Page-Write
EEPROMs manufactured with high-performance Super-
Flash technology. The split-gate cell design and thick-oxide
tunneling injector attain better reliability and manufacturabil-
ity
GLS29EE010 write with a single power supply. Internal
Erase/Program
GLS29EE010 conform to JEDEC standard pinouts for
byte-wide memories.
Featuring high performance Page-Write, the GLS29EE010
provides a typical Byte-Write time of 39 µsec. The entire
memory, i.e., 128 Kbyte, can be written page-by-page in as
little as 5 seconds, when using interface features such as
Toggle Bit or Data# Polling to indicate the completion of a
Write cycle. To protect against inadvertent write, the
GLS29EE010 has on-chip hardware and Software Data
Protection schemes. Designed, manufactured, and tested
for a wide spectrum of applications, the GLS29EE010 is
offered with a guaranteed Page-Write endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
The GLS29EE010 is suited for applications that
require convenient and economical updating of pro-
gram, configuration, or data memory. For all system
applications, the GLS29EE010 significantly improves
performance and reliability, while lowering power con-
©2010 Greenliant Systems, Ltd.
– 4.5-5.5V for GLS29EE010
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical) for 5V and
– Standby Current: 10 µA (typical)
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
– 4.5-5.5V operation: 70 and 90 ns
– 2.7-3.6V operation: 150 and 200 ns
compared
1 Mbit (128K x8) Page-Write EEPROM
is
with
transparent
10 mA (typical) for 2.7V
GLS29EE0101Mb (x8) Page-Write, Small-Sector flash memories
alternate
GLS29EE010
to
approaches.
the
user.
www.greenliant.com
The
The
• Latched Address and Data
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• Product Identification can be accessed via
• TTL I/O Compatibility
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
sumption. The GLS29EE010 improves flexibility while
lowering the cost for program, data, and configuration
storage applications.
To meet high density, surface mount requirements, the
GLS29EE010 is offered in 32-lead PLCC and 32-lead
TSOP packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 2, 3, and 4 for pin assignments.
Device Operation
The Greenliant Page-Write EEPROM offers in-circuit elec-
trical write capability. The GLS29EE010 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The GLS29EE010 has industry stan-
dard optional Software Data Protection, which Greenliant
recommends always to be enabled. The GLS29EE010 is
compatible with industry standard EEPROM pinouts and
functionality.
– Internal V
– Toggle Bit
– Data# Polling
Software Operation
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
PP
Generation
S71061-15-00105/10
Data Sheet

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